TY - JOUR

T1 - Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

AU - Zhuravlev, A. G.

AU - Alperovich, V. L.

PY - 2017/2/15

Y1 - 2017/2/15

N2 - The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °С leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs.

AB - The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °С leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs.

KW - Cesium

KW - GaAs surface

KW - Photoemission

KW - Photon-enhanced thermionic emission

KW - Solar energy conversion

KW - ENERGY

KW - INTERFACE

KW - CESIUM

UR - http://www.scopus.com/inward/record.url?scp=84971624267&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2016.05.057

DO - 10.1016/j.apsusc.2016.05.057

M3 - Article

AN - SCOPUS:84971624267

VL - 395

SP - 3

EP - 8

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -