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Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers. / Zhuravlev, A. G.; Alperovich, V. L.

In: Applied Surface Science, Vol. 395, 15.02.2017, p. 3-8.

Research output: Contribution to journal › Article › peer-review

Harvard

Zhuravlev, AG & Alperovich, VL 2017, 'Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers', Applied Surface Science, vol. 395, pp. 3-8. https://doi.org/10.1016/j.apsusc.2016.05.057

APA

Zhuravlev, A. G., & Alperovich, V. L. (2017). Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers. Applied Surface Science, 395, 3-8. https://doi.org/10.1016/j.apsusc.2016.05.057

Vancouver

Zhuravlev AG, Alperovich VL. Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers. Applied Surface Science. 2017 Feb 15;395:3-8. doi: 10.1016/j.apsusc.2016.05.057

Author

Zhuravlev, A. G. ; Alperovich, V. L. / Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers. In: Applied Surface Science. 2017 ; Vol. 395. pp. 3-8.

BibTeX

@article{63344b102a3f4b2981d97c6de2de41c8,
title = "Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers",
abstract = "The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °С leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs.",
keywords = "Cesium, GaAs surface, Photoemission, Photon-enhanced thermionic emission, Solar energy conversion, ENERGY, INTERFACE, CESIUM",
author = "Zhuravlev, {A. G.} and Alperovich, {V. L.}",
year = "2017",
month = feb,
day = "15",
doi = "10.1016/j.apsusc.2016.05.057",
language = "English",
volume = "395",
pages = "3--8",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

AU - Zhuravlev, A. G.

AU - Alperovich, V. L.

PY - 2017/2/15

Y1 - 2017/2/15

N2 - The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °С leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs.

AB - The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °С leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs.

KW - Cesium

KW - GaAs surface

KW - Photoemission

KW - Photon-enhanced thermionic emission

KW - Solar energy conversion

KW - ENERGY

KW - INTERFACE

KW - CESIUM

UR - http://www.scopus.com/inward/record.url?scp=84971624267&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2016.05.057

DO - 10.1016/j.apsusc.2016.05.057

M3 - Article

AN - SCOPUS:84971624267

VL - 395

SP - 3

EP - 8

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

ID: 10321544