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Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes. / Rozhkov, S. A.; Bakin, V. V.; Scheibler, H. E. и др.

в: Physical Review Letters, Том 136, № 12, 127001, 25.03.2026.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

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Rozhkov SA, Bakin VV, Scheibler HE, Rusetsky VS, Gorshkov DV, Kustov DA и др. Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes. Physical Review Letters. 2026 март 25;136(12):127001. doi: 10.1103/j7rl-8xcc

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BibTeX

@article{14168f7a80234657a18d5eb240703600,
title = "Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes",
abstract = "The search for photocathode materials with low mean transverse energies (MTEs) and, hence, low intrinsic emittance is of crucial importance for various fields of particle and solid-state physics. Here, we demonstrate that polycrystalline multialkali Na2KSb(Cs,Sb) photocathodes with negative effective electron affinity (NEA) have MTE values at room temperature by a factor of 2 lower than those of monocrystalline p-GaAs(Cs,O) photocathodes. These low MTE values are due to the electron refraction on the jump in mass between a small effective mass in Na2KSb and free electron mass in vacuum. It is proved that, at the NEA state, up to half of photoelectrons are emitted in a narrow-angle cone with the fractional MTE of (9±1) meV at room temperature. We also showed that the transition from NEA to positive effective affinity results in the subthermal total MTE of the Na2KSb(Cs,Sb) photocathode, along with quantum efficiency of about 10-2. The physical reasons for the manifestation of the refraction effect in multialkali photocathodes are discussed, opening up opportunities for the development of high-brightness and ultracold robust electron sources.",
keywords = "Electron emission, Surface & interfacial phenomena, Electron sources, Interfaces, Layered semiconductors, Photoemission spectroscopy",
author = "Rozhkov, {S. A.} and Bakin, {V. V.} and Scheibler, {H. E.} and Rusetsky, {V. S.} and Gorshkov, {D. V.} and Kustov, {D. A.} and Golyashov, {V. A.} and Alperovich, {V. L.} and Tereshchenko, {O. E.}",
note = "The authors acknowledge the support from the Russian Science Foundation (Grant No. 25-62-00004), SRF SKIF Boreskov Institute of Catalysis (Grant No. FWUR-2024-0040), and ISP SB RAS. The authors would like to thank Professor A. S. Terekhov for stimulating discussions.",
year = "2026",
month = mar,
day = "25",
doi = "10.1103/j7rl-8xcc",
language = "English",
volume = "136",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "12",

}

RIS

TY - JOUR

T1 - Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes

AU - Rozhkov, S. A.

AU - Bakin, V. V.

AU - Scheibler, H. E.

AU - Rusetsky, V. S.

AU - Gorshkov, D. V.

AU - Kustov, D. A.

AU - Golyashov, V. A.

AU - Alperovich, V. L.

AU - Tereshchenko, O. E.

N1 - The authors acknowledge the support from the Russian Science Foundation (Grant No. 25-62-00004), SRF SKIF Boreskov Institute of Catalysis (Grant No. FWUR-2024-0040), and ISP SB RAS. The authors would like to thank Professor A. S. Terekhov for stimulating discussions.

PY - 2026/3/25

Y1 - 2026/3/25

N2 - The search for photocathode materials with low mean transverse energies (MTEs) and, hence, low intrinsic emittance is of crucial importance for various fields of particle and solid-state physics. Here, we demonstrate that polycrystalline multialkali Na2KSb(Cs,Sb) photocathodes with negative effective electron affinity (NEA) have MTE values at room temperature by a factor of 2 lower than those of monocrystalline p-GaAs(Cs,O) photocathodes. These low MTE values are due to the electron refraction on the jump in mass between a small effective mass in Na2KSb and free electron mass in vacuum. It is proved that, at the NEA state, up to half of photoelectrons are emitted in a narrow-angle cone with the fractional MTE of (9±1) meV at room temperature. We also showed that the transition from NEA to positive effective affinity results in the subthermal total MTE of the Na2KSb(Cs,Sb) photocathode, along with quantum efficiency of about 10-2. The physical reasons for the manifestation of the refraction effect in multialkali photocathodes are discussed, opening up opportunities for the development of high-brightness and ultracold robust electron sources.

AB - The search for photocathode materials with low mean transverse energies (MTEs) and, hence, low intrinsic emittance is of crucial importance for various fields of particle and solid-state physics. Here, we demonstrate that polycrystalline multialkali Na2KSb(Cs,Sb) photocathodes with negative effective electron affinity (NEA) have MTE values at room temperature by a factor of 2 lower than those of monocrystalline p-GaAs(Cs,O) photocathodes. These low MTE values are due to the electron refraction on the jump in mass between a small effective mass in Na2KSb and free electron mass in vacuum. It is proved that, at the NEA state, up to half of photoelectrons are emitted in a narrow-angle cone with the fractional MTE of (9±1) meV at room temperature. We also showed that the transition from NEA to positive effective affinity results in the subthermal total MTE of the Na2KSb(Cs,Sb) photocathode, along with quantum efficiency of about 10-2. The physical reasons for the manifestation of the refraction effect in multialkali photocathodes are discussed, opening up opportunities for the development of high-brightness and ultracold robust electron sources.

KW - Electron emission

KW - Surface & interfacial phenomena

KW - Electron sources

KW - Interfaces

KW - Layered semiconductors

KW - Photoemission spectroscopy

UR - https://www.scopus.com/pages/publications/105034574426

UR - https://www.mendeley.com/catalogue/3a60c271-43d7-34f0-a9ab-4f30346fef65/

U2 - 10.1103/j7rl-8xcc

DO - 10.1103/j7rl-8xcc

M3 - Article

C2 - 41965022

VL - 136

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 12

M1 - 127001

ER -

ID: 83282094