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Spin-orbit splitting of the conduction band in HgTe quantum wells : Role of different mechanisms. / Minkov, G. M.; Aleshkin, V. Ya; Rut, O. E. и др.

в: Physica E: Low-Dimensional Systems and Nanostructures, Том 110, 01.06.2019, стр. 95-99.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Minkov, GM, Aleshkin, VY, Rut, OE, Sherstobitov, AA, Germanenko, AV, Dvoretski, SA & Mikhailov, NN 2019, 'Spin-orbit splitting of the conduction band in HgTe quantum wells: Role of different mechanisms', Physica E: Low-Dimensional Systems and Nanostructures, Том. 110, стр. 95-99. https://doi.org/10.1016/j.physe.2019.02.007

APA

Minkov, G. M., Aleshkin, V. Y., Rut, O. E., Sherstobitov, A. A., Germanenko, A. V., Dvoretski, S. A., & Mikhailov, N. N. (2019). Spin-orbit splitting of the conduction band in HgTe quantum wells: Role of different mechanisms. Physica E: Low-Dimensional Systems and Nanostructures, 110, 95-99. https://doi.org/10.1016/j.physe.2019.02.007

Vancouver

Minkov GM, Aleshkin VY, Rut OE, Sherstobitov AA, Germanenko AV, Dvoretski SA и др. Spin-orbit splitting of the conduction band in HgTe quantum wells: Role of different mechanisms. Physica E: Low-Dimensional Systems and Nanostructures. 2019 июнь 1;110:95-99. doi: 10.1016/j.physe.2019.02.007

Author

Minkov, G. M. ; Aleshkin, V. Ya ; Rut, O. E. и др. / Spin-orbit splitting of the conduction band in HgTe quantum wells : Role of different mechanisms. в: Physica E: Low-Dimensional Systems and Nanostructures. 2019 ; Том 110. стр. 95-99.

BibTeX

@article{d6c38f67cbd9473b98159fed3e46046b,
title = "Spin-orbit splitting of the conduction band in HgTe quantum wells: Role of different mechanisms",
abstract = " Spin-orbit splitting of conduction band in HgTe quantum wells was studied experimentally. In order to recognize the role of different mechanisms, we carried out detailed measurements of the Shubnikov-de Haas oscillations in gated structures with a quantum well widths from 8 to 18 nm over a wide range of electron density. With increasing electron density controlled by the gate voltage, splitting of the maximum of the oscillation Fourier spectrum f 0 into two components f 1 and f 2 and the appearance of the low-frequency component f 3 was observed. Our analysis shows that the components f 1 and f 2 are determined by the electron densities n 1 and n 2 in spin-orbit split subbands while the f 3 component results from magneto-intersubband oscillations so that it is determined by the difference between these densities Δn. This allows us to obtain all three values n 1 , n 2 and Δn independently. Comparison of the data obtained with results of self-consistent calculations carried out within the framework of four-band kP model shows that the main contribution to spin-orbit splitting comes from the Bychkov-Rashba effect. Contribution of the interface inversion asymmetry to the splitting of the conduction band turns out to be four-to-five times less than that for the valence band in the same structures. ",
keywords = "Electron transport, Energy spectrum, Quantum wells, MAGNETO-INTERSUBBAND SCATTERING",
author = "Minkov, {G. M.} and Aleshkin, {V. Ya} and Rut, {O. E.} and Sherstobitov, {A. A.} and Germanenko, {A. V.} and Dvoretski, {S. A.} and Mikhailov, {N. N.}",
year = "2019",
month = jun,
day = "1",
doi = "10.1016/j.physe.2019.02.007",
language = "English",
volume = "110",
pages = "95--99",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Spin-orbit splitting of the conduction band in HgTe quantum wells

T2 - Role of different mechanisms

AU - Minkov, G. M.

AU - Aleshkin, V. Ya

AU - Rut, O. E.

AU - Sherstobitov, A. A.

AU - Germanenko, A. V.

AU - Dvoretski, S. A.

AU - Mikhailov, N. N.

PY - 2019/6/1

Y1 - 2019/6/1

N2 - Spin-orbit splitting of conduction band in HgTe quantum wells was studied experimentally. In order to recognize the role of different mechanisms, we carried out detailed measurements of the Shubnikov-de Haas oscillations in gated structures with a quantum well widths from 8 to 18 nm over a wide range of electron density. With increasing electron density controlled by the gate voltage, splitting of the maximum of the oscillation Fourier spectrum f 0 into two components f 1 and f 2 and the appearance of the low-frequency component f 3 was observed. Our analysis shows that the components f 1 and f 2 are determined by the electron densities n 1 and n 2 in spin-orbit split subbands while the f 3 component results from magneto-intersubband oscillations so that it is determined by the difference between these densities Δn. This allows us to obtain all three values n 1 , n 2 and Δn independently. Comparison of the data obtained with results of self-consistent calculations carried out within the framework of four-band kP model shows that the main contribution to spin-orbit splitting comes from the Bychkov-Rashba effect. Contribution of the interface inversion asymmetry to the splitting of the conduction band turns out to be four-to-five times less than that for the valence band in the same structures.

AB - Spin-orbit splitting of conduction band in HgTe quantum wells was studied experimentally. In order to recognize the role of different mechanisms, we carried out detailed measurements of the Shubnikov-de Haas oscillations in gated structures with a quantum well widths from 8 to 18 nm over a wide range of electron density. With increasing electron density controlled by the gate voltage, splitting of the maximum of the oscillation Fourier spectrum f 0 into two components f 1 and f 2 and the appearance of the low-frequency component f 3 was observed. Our analysis shows that the components f 1 and f 2 are determined by the electron densities n 1 and n 2 in spin-orbit split subbands while the f 3 component results from magneto-intersubband oscillations so that it is determined by the difference between these densities Δn. This allows us to obtain all three values n 1 , n 2 and Δn independently. Comparison of the data obtained with results of self-consistent calculations carried out within the framework of four-band kP model shows that the main contribution to spin-orbit splitting comes from the Bychkov-Rashba effect. Contribution of the interface inversion asymmetry to the splitting of the conduction band turns out to be four-to-five times less than that for the valence band in the same structures.

KW - Electron transport

KW - Energy spectrum

KW - Quantum wells

KW - MAGNETO-INTERSUBBAND SCATTERING

UR - http://www.scopus.com/inward/record.url?scp=85061823066&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2019.02.007

DO - 10.1016/j.physe.2019.02.007

M3 - Article

AN - SCOPUS:85061823066

VL - 110

SP - 95

EP - 99

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

ER -

ID: 18622531