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Spin-orbit splitting of the conduction band in HgTe quantum wells : Role of different mechanisms. / Minkov, G. M.; Aleshkin, V. Ya; Rut, O. E. et al.
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 110, 01.06.2019, p. 95-99.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Spin-orbit splitting of the conduction band in HgTe quantum wells
T2 - Role of different mechanisms
AU - Minkov, G. M.
AU - Aleshkin, V. Ya
AU - Rut, O. E.
AU - Sherstobitov, A. A.
AU - Germanenko, A. V.
AU - Dvoretski, S. A.
AU - Mikhailov, N. N.
PY - 2019/6/1
Y1 - 2019/6/1
N2 - Spin-orbit splitting of conduction band in HgTe quantum wells was studied experimentally. In order to recognize the role of different mechanisms, we carried out detailed measurements of the Shubnikov-de Haas oscillations in gated structures with a quantum well widths from 8 to 18 nm over a wide range of electron density. With increasing electron density controlled by the gate voltage, splitting of the maximum of the oscillation Fourier spectrum f 0 into two components f 1 and f 2 and the appearance of the low-frequency component f 3 was observed. Our analysis shows that the components f 1 and f 2 are determined by the electron densities n 1 and n 2 in spin-orbit split subbands while the f 3 component results from magneto-intersubband oscillations so that it is determined by the difference between these densities Δn. This allows us to obtain all three values n 1 , n 2 and Δn independently. Comparison of the data obtained with results of self-consistent calculations carried out within the framework of four-band kP model shows that the main contribution to spin-orbit splitting comes from the Bychkov-Rashba effect. Contribution of the interface inversion asymmetry to the splitting of the conduction band turns out to be four-to-five times less than that for the valence band in the same structures.
AB - Spin-orbit splitting of conduction band in HgTe quantum wells was studied experimentally. In order to recognize the role of different mechanisms, we carried out detailed measurements of the Shubnikov-de Haas oscillations in gated structures with a quantum well widths from 8 to 18 nm over a wide range of electron density. With increasing electron density controlled by the gate voltage, splitting of the maximum of the oscillation Fourier spectrum f 0 into two components f 1 and f 2 and the appearance of the low-frequency component f 3 was observed. Our analysis shows that the components f 1 and f 2 are determined by the electron densities n 1 and n 2 in spin-orbit split subbands while the f 3 component results from magneto-intersubband oscillations so that it is determined by the difference between these densities Δn. This allows us to obtain all three values n 1 , n 2 and Δn independently. Comparison of the data obtained with results of self-consistent calculations carried out within the framework of four-band kP model shows that the main contribution to spin-orbit splitting comes from the Bychkov-Rashba effect. Contribution of the interface inversion asymmetry to the splitting of the conduction band turns out to be four-to-five times less than that for the valence band in the same structures.
KW - Electron transport
KW - Energy spectrum
KW - Quantum wells
KW - MAGNETO-INTERSUBBAND SCATTERING
UR - http://www.scopus.com/inward/record.url?scp=85061823066&partnerID=8YFLogxK
U2 - 10.1016/j.physe.2019.02.007
DO - 10.1016/j.physe.2019.02.007
M3 - Article
AN - SCOPUS:85061823066
VL - 110
SP - 95
EP - 99
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
ER -
ID: 18622531