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Smoothing of Polycrystalline AlN Thin Films with Argon Cluster Ions. / Nikolaev, I. V.; Korobeishchikov, N. G.; Roenko, M. A. и др.

в: Technical Physics Letters, Том 47, № 4, 12, 04.2021, стр. 301-304.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

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Nikolaev IV, Korobeishchikov NG, Roenko MA, Geydt PV, Strunin VI. Smoothing of Polycrystalline AlN Thin Films with Argon Cluster Ions. Technical Physics Letters. 2021 апр.;47(4):301-304. 12. doi: 10.1134/S1063785021030275

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Nikolaev, I. V. ; Korobeishchikov, N. G. ; Roenko, M. A. и др. / Smoothing of Polycrystalline AlN Thin Films with Argon Cluster Ions. в: Technical Physics Letters. 2021 ; Том 47, № 4. стр. 301-304.

BibTeX

@article{3958f0adb3e342c8b34be11a02f63dc3,
title = "Smoothing of Polycrystalline AlN Thin Films with Argon Cluster Ions",
abstract = "Surface modification of polycrystalline thin films of aluminum nitride using bombardment with an cluster ion beam has been investigated. The treatment has been performed using high-energy (105 eV/atom) and low-energy (10 eV/atom) argon cluster ions. High-efficiency smoothing of the nanostructured surface in a wide range of spatial frequencies (v = 0.02–128 μm–1) at ultrasmall etching depth (<100 nm) is demonstrated by atomic force microscopy with the application of the power spectral density function of roughness.",
keywords = "aluminum nitride, cluster ion beam, surface smoothing, thin films",
author = "Nikolaev, {I. V.} and Korobeishchikov, {N. G.} and Roenko, {M. A.} and Geydt, {P. V.} and Strunin, {V. I.}",
note = "Funding Information: This study was supported by the Ministry of Science and Higher Education of the Russian Federation (grants nos. FSUS-2020-0039 and FSUS-2020-0029) and performed within the framework of a state assignment to the Omsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences (no. 075-03-2020-614). Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",
year = "2021",
month = apr,
doi = "10.1134/S1063785021030275",
language = "English",
volume = "47",
pages = "301--304",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "4",

}

RIS

TY - JOUR

T1 - Smoothing of Polycrystalline AlN Thin Films with Argon Cluster Ions

AU - Nikolaev, I. V.

AU - Korobeishchikov, N. G.

AU - Roenko, M. A.

AU - Geydt, P. V.

AU - Strunin, V. I.

N1 - Funding Information: This study was supported by the Ministry of Science and Higher Education of the Russian Federation (grants nos. FSUS-2020-0039 and FSUS-2020-0029) and performed within the framework of a state assignment to the Omsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences (no. 075-03-2020-614). Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/4

Y1 - 2021/4

N2 - Surface modification of polycrystalline thin films of aluminum nitride using bombardment with an cluster ion beam has been investigated. The treatment has been performed using high-energy (105 eV/atom) and low-energy (10 eV/atom) argon cluster ions. High-efficiency smoothing of the nanostructured surface in a wide range of spatial frequencies (v = 0.02–128 μm–1) at ultrasmall etching depth (<100 nm) is demonstrated by atomic force microscopy with the application of the power spectral density function of roughness.

AB - Surface modification of polycrystalline thin films of aluminum nitride using bombardment with an cluster ion beam has been investigated. The treatment has been performed using high-energy (105 eV/atom) and low-energy (10 eV/atom) argon cluster ions. High-efficiency smoothing of the nanostructured surface in a wide range of spatial frequencies (v = 0.02–128 μm–1) at ultrasmall etching depth (<100 nm) is demonstrated by atomic force microscopy with the application of the power spectral density function of roughness.

KW - aluminum nitride

KW - cluster ion beam

KW - surface smoothing

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=85121124922&partnerID=8YFLogxK

UR - https://elibrary.ru/item.asp?id=47542410

UR - https://www.mendeley.com/catalogue/3de63ebb-40c3-350e-b0f4-30d2d4704998/

U2 - 10.1134/S1063785021030275

DO - 10.1134/S1063785021030275

M3 - Article

AN - SCOPUS:85121124922

VL - 47

SP - 301

EP - 304

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 4

M1 - 12

ER -

ID: 34976742