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Silicon Nanopillar Microarrays : Formation and Resonance Reflection of Light. / Basalaeva, L. S.; Nastaushev, Yu V.; Dultsev, F. N. и др.

в: Semiconductors, Том 53, № 2, 01.02.2019, стр. 205-209.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Basalaeva, LS, Nastaushev, YV, Dultsev, FN, Kryzhanovskaya, NV & Moiseev, EI 2019, 'Silicon Nanopillar Microarrays: Formation and Resonance Reflection of Light', Semiconductors, Том. 53, № 2, стр. 205-209. https://doi.org/10.1134/S1063782619020027

APA

Basalaeva, L. S., Nastaushev, Y. V., Dultsev, F. N., Kryzhanovskaya, N. V., & Moiseev, E. I. (2019). Silicon Nanopillar Microarrays: Formation and Resonance Reflection of Light. Semiconductors, 53(2), 205-209. https://doi.org/10.1134/S1063782619020027

Vancouver

Basalaeva LS, Nastaushev YV, Dultsev FN, Kryzhanovskaya NV, Moiseev EI. Silicon Nanopillar Microarrays: Formation and Resonance Reflection of Light. Semiconductors. 2019 февр. 1;53(2):205-209. doi: 10.1134/S1063782619020027

Author

Basalaeva, L. S. ; Nastaushev, Yu V. ; Dultsev, F. N. и др. / Silicon Nanopillar Microarrays : Formation and Resonance Reflection of Light. в: Semiconductors. 2019 ; Том 53, № 2. стр. 205-209.

BibTeX

@article{166d5571d2fc4f3aa1bcae53adde9bdd,
title = "Silicon Nanopillar Microarrays: Formation and Resonance Reflection of Light",
abstract = "The results of investigating the spectral characteristics of reflection from silicon nanopillar (Si NP) microarrays in the wavelength region from 400 to 1100 nm are presented. The Si nanopillars are formed by electron lithography on a negative resist with subsequent reactive ion etching. The Si nanopillars are etched through a resist mask and SiO2 100 nm thick. In the spectra of reflection from nanopillar microarrays, minima are observed, the position of which depends strongly on the Si nanopillar diameter.",
keywords = "FABRICATION, COLORS, ARRAYS",
author = "Basalaeva, {L. S.} and Nastaushev, {Yu V.} and Dultsev, {F. N.} and Kryzhanovskaya, {N. V.} and Moiseev, {E. I.}",
year = "2019",
month = feb,
day = "1",
doi = "10.1134/S1063782619020027",
language = "English",
volume = "53",
pages = "205--209",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "2",

}

RIS

TY - JOUR

T1 - Silicon Nanopillar Microarrays

T2 - Formation and Resonance Reflection of Light

AU - Basalaeva, L. S.

AU - Nastaushev, Yu V.

AU - Dultsev, F. N.

AU - Kryzhanovskaya, N. V.

AU - Moiseev, E. I.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - The results of investigating the spectral characteristics of reflection from silicon nanopillar (Si NP) microarrays in the wavelength region from 400 to 1100 nm are presented. The Si nanopillars are formed by electron lithography on a negative resist with subsequent reactive ion etching. The Si nanopillars are etched through a resist mask and SiO2 100 nm thick. In the spectra of reflection from nanopillar microarrays, minima are observed, the position of which depends strongly on the Si nanopillar diameter.

AB - The results of investigating the spectral characteristics of reflection from silicon nanopillar (Si NP) microarrays in the wavelength region from 400 to 1100 nm are presented. The Si nanopillars are formed by electron lithography on a negative resist with subsequent reactive ion etching. The Si nanopillars are etched through a resist mask and SiO2 100 nm thick. In the spectra of reflection from nanopillar microarrays, minima are observed, the position of which depends strongly on the Si nanopillar diameter.

KW - FABRICATION

KW - COLORS

KW - ARRAYS

UR - http://www.scopus.com/inward/record.url?scp=85064944559&partnerID=8YFLogxK

U2 - 10.1134/S1063782619020027

DO - 10.1134/S1063782619020027

M3 - Article

AN - SCOPUS:85064944559

VL - 53

SP - 205

EP - 209

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -

ID: 20157217