Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Short-range order and optical properties of thin GeOx films obtained by thermal evaporation of GeO and GeO2. / Hamoud, Ghaithaa; Samus, Alexey; Matsynin, Alexey и др.
в: Thin Solid Films, Том 836, 140869, 15.02.2026.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Short-range order and optical properties of thin GeOx films obtained by thermal evaporation of GeO and GeO2
AU - Hamoud, Ghaithaa
AU - Samus, Alexey
AU - Matsynin, Alexey
AU - Komogortsev, Sergey
AU - Zhandun, Vyacheslav
AU - Prosvirin, Igor
AU - Astankova, Ksenia
AU - Azarov, Ivan
AU - Geydt, Pavel
AU - Milekhin, Ilya
AU - Volodin, Vladimir
N1 - The authors acknowledge the «CKP VTAN» of the Novosibirsk State University for conducting measurements on the scientific equipment of the center. The authors acknowledge A.V.Kapishnikov for additional structural characterization. In part of technology development and sample preparation, the work was carried out within the framework of a State Assignment (Federal Research Center KSC Siberian Branch Russian Academy of Sciences). In part of studying the structural and optical properties, the work was carried out within the framework of a State Assignment [ISP SB RAS No. FWGW-2025-0023]. In terms of studying samples using the AFM method, the work was carried out using funds by the Ministry of Science and Higher Education of the Russian Federation, [grant No. "FSUS-2024-0020″].
PY - 2026/2/15
Y1 - 2026/2/15
N2 - A simple method for producing GeOx thin films by thermal evaporation of GeO2, GeO and GeOx targets is proposed. The method does not require high vacuum and electron (or ion) beams or plasma discharge for target evaporation. The atomic structure, optical properties and thicknesses of the obtained GeOx films grown on silicon and glass substrates were studied using a set of methods: X-ray photoelectron spectroscopy, Raman scattering spectroscopy, infrared spectroscopy, transmission and reflection spectroscopies, and spectral ellipsometry. Optical bandgaps (absorption edges) were determined for films grown from different targets.
AB - A simple method for producing GeOx thin films by thermal evaporation of GeO2, GeO and GeOx targets is proposed. The method does not require high vacuum and electron (or ion) beams or plasma discharge for target evaporation. The atomic structure, optical properties and thicknesses of the obtained GeOx films grown on silicon and glass substrates were studied using a set of methods: X-ray photoelectron spectroscopy, Raman scattering spectroscopy, infrared spectroscopy, transmission and reflection spectroscopies, and spectral ellipsometry. Optical bandgaps (absorption edges) were determined for films grown from different targets.
KW - Germanium oxide
KW - Optical bandgap
KW - Short-range order
KW - Tauc model
KW - Thermal evaporation
KW - Thin film
UR - https://www.scopus.com/pages/publications/105034086980
UR - https://www.mendeley.com/catalogue/dd1152f8-84c8-301c-a8e4-b6064caf944f/
U2 - 10.1016/j.tsf.2026.140869
DO - 10.1016/j.tsf.2026.140869
M3 - Article
VL - 836
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
M1 - 140869
ER -
ID: 80950227