TY - JOUR

T1 - Raman Scattering Spectroscopy and Photoluminescence of GaAs Nanowires

AU - Kalachev, I. V.

AU - Milekhin, I. A.

AU - Emel’yanov, E. A.

AU - Preobrazhenskii, V. V.

AU - Tumashev, V. S.

AU - Milekhin, A. G.

AU - Latyshev, A. V.

N1 - This work is supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 075-15-2020-797 (13.1902.21.0024). Публикация для корректировки.

PY - 2023/12

Y1 - 2023/12

N2 - Experimental data on studying the phonon and optical properties of GaAs nanowires with orientation (111) located on a gold substrate with the help of Raman scattering spectroscopy (RSS) and photoluminescence (PL) are presented. Structural parameters of nanowires are determined by the atomic-force microscopy (AFM) and scanning electron microscopy (SEM) methods. In the micro-RSS and micro-PL spectra of a single GaAs nanowire, the modes of optical phonons of GaAs and their overtones up to the third order and an exciton luminescence band are observed. In the micro-PL spectra, anisotropy of the PL intensity is observed; the maximum/minimum signal is observed at the polarization-vector direction along/across the wire. Mapping of nano-PL of a single GaAs nanowire is performed with a spatial resolution of 20 nm, which is significantly smaller than the diffraction limit. When passing to the nanometer scale, a plasmon amplification of the signal of the near-field exciton nano-PL conditioned by the metallized AFM-needle is revealed.

AB - Experimental data on studying the phonon and optical properties of GaAs nanowires with orientation (111) located on a gold substrate with the help of Raman scattering spectroscopy (RSS) and photoluminescence (PL) are presented. Structural parameters of nanowires are determined by the atomic-force microscopy (AFM) and scanning electron microscopy (SEM) methods. In the micro-RSS and micro-PL spectra of a single GaAs nanowire, the modes of optical phonons of GaAs and their overtones up to the third order and an exciton luminescence band are observed. In the micro-PL spectra, anisotropy of the PL intensity is observed; the maximum/minimum signal is observed at the polarization-vector direction along/across the wire. Mapping of nano-PL of a single GaAs nanowire is performed with a spatial resolution of 20 nm, which is significantly smaller than the diffraction limit. When passing to the nanometer scale, a plasmon amplification of the signal of the near-field exciton nano-PL conditioned by the metallized AFM-needle is revealed.

KW - Raman scattering

KW - localized plasmon resonance

KW - nanostructures

KW - nanowires

KW - near-field optical spectroscopy

KW - phonons

KW - photoluminescence

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85188993970&origin=inward&txGid=71d00e9178de5928d97e127fae58324a

UR - https://www.mendeley.com/catalogue/08909f8b-f949-396b-8d40-c76f3a87666b/

U2 - 10.3103/S8756699023060055

DO - 10.3103/S8756699023060055

M3 - Article

VL - 59

SP - 659

EP - 666

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 6

ER -