Research output: Contribution to journal › Article › peer-review
Raman Scattering Spectroscopy and Photoluminescence of GaAs Nanowires. / Kalachev, I. V.; Milekhin, I. A.; Emel’yanov, E. A. et al.
In: Optoelectronics, Instrumentation and Data Processing, Vol. 59, No. 6, 12.2023, p. 659-666.Research output: Contribution to journal › Article › peer-review
}
TY - JOUR
T1 - Raman Scattering Spectroscopy and Photoluminescence of GaAs Nanowires
AU - Kalachev, I. V.
AU - Milekhin, I. A.
AU - Emel’yanov, E. A.
AU - Preobrazhenskii, V. V.
AU - Tumashev, V. S.
AU - Milekhin, A. G.
AU - Latyshev, A. V.
N1 - This work is supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 075-15-2020-797 (13.1902.21.0024). Публикация для корректировки.
PY - 2023/12
Y1 - 2023/12
N2 - Experimental data on studying the phonon and optical properties of GaAs nanowires with orientation (111) located on a gold substrate with the help of Raman scattering spectroscopy (RSS) and photoluminescence (PL) are presented. Structural parameters of nanowires are determined by the atomic-force microscopy (AFM) and scanning electron microscopy (SEM) methods. In the micro-RSS and micro-PL spectra of a single GaAs nanowire, the modes of optical phonons of GaAs and their overtones up to the third order and an exciton luminescence band are observed. In the micro-PL spectra, anisotropy of the PL intensity is observed; the maximum/minimum signal is observed at the polarization-vector direction along/across the wire. Mapping of nano-PL of a single GaAs nanowire is performed with a spatial resolution of 20 nm, which is significantly smaller than the diffraction limit. When passing to the nanometer scale, a plasmon amplification of the signal of the near-field exciton nano-PL conditioned by the metallized AFM-needle is revealed.
AB - Experimental data on studying the phonon and optical properties of GaAs nanowires with orientation (111) located on a gold substrate with the help of Raman scattering spectroscopy (RSS) and photoluminescence (PL) are presented. Structural parameters of nanowires are determined by the atomic-force microscopy (AFM) and scanning electron microscopy (SEM) methods. In the micro-RSS and micro-PL spectra of a single GaAs nanowire, the modes of optical phonons of GaAs and their overtones up to the third order and an exciton luminescence band are observed. In the micro-PL spectra, anisotropy of the PL intensity is observed; the maximum/minimum signal is observed at the polarization-vector direction along/across the wire. Mapping of nano-PL of a single GaAs nanowire is performed with a spatial resolution of 20 nm, which is significantly smaller than the diffraction limit. When passing to the nanometer scale, a plasmon amplification of the signal of the near-field exciton nano-PL conditioned by the metallized AFM-needle is revealed.
KW - Raman scattering
KW - localized plasmon resonance
KW - nanostructures
KW - nanowires
KW - near-field optical spectroscopy
KW - phonons
KW - photoluminescence
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85188993970&origin=inward&txGid=71d00e9178de5928d97e127fae58324a
UR - https://www.mendeley.com/catalogue/08909f8b-f949-396b-8d40-c76f3a87666b/
U2 - 10.3103/S8756699023060055
DO - 10.3103/S8756699023060055
M3 - Article
VL - 59
SP - 659
EP - 666
JO - Optoelectronics, Instrumentation and Data Processing
JF - Optoelectronics, Instrumentation and Data Processing
SN - 8756-6990
IS - 6
ER -
ID: 59887824