Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Radiation enhancement in doped AlGaN-structures upon optical pumping. / Bokhan, P. A.; Zhuravlev, K. S.; Zakrevsky, D. E. и др.
в: Technical Physics Letters, Том 43, № 1, 01.01.2017, стр. 46-49.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Radiation enhancement in doped AlGaN-structures upon optical pumping
AU - Bokhan, P. A.
AU - Zhuravlev, K. S.
AU - Zakrevsky, D. E.
AU - Malin, T. V.
AU - Osinnykh, I. V.
AU - Fateev, N. V.
PY - 2017/1/1
Y1 - 2017/1/1
N2 - Spectral characteristics of spontaneous and stimulated luminescence have been studied for molecular beam epitaxy synthesized AlxGa1–xN/AlN solid solutions with x = 0.5 and 0.74 upon optical pumping by pulse laser radiation with λ = 266 nm. Broadband radiation spectra with a width of ~260 THz for Al0.5Ga0.5N and ~360 THz for Al0.74Ga0.26N have been obtained. The measured enhancement factors are g ≈ 70 cm–1 for Al0.5Ga0.5N at λ ≈ 528 nm and g ≈ 20 cm–1 for Al0.74Ga0.26N at λ ≈ 468 nm.
AB - Spectral characteristics of spontaneous and stimulated luminescence have been studied for molecular beam epitaxy synthesized AlxGa1–xN/AlN solid solutions with x = 0.5 and 0.74 upon optical pumping by pulse laser radiation with λ = 266 nm. Broadband radiation spectra with a width of ~260 THz for Al0.5Ga0.5N and ~360 THz for Al0.74Ga0.26N have been obtained. The measured enhancement factors are g ≈ 70 cm–1 for Al0.5Ga0.5N at λ ≈ 528 nm and g ≈ 20 cm–1 for Al0.74Ga0.26N at λ ≈ 468 nm.
KW - MOLECULAR-BEAM EPITAXY
UR - http://www.scopus.com/inward/record.url?scp=85013254078&partnerID=8YFLogxK
U2 - 10.1134/S1063785017010059
DO - 10.1134/S1063785017010059
M3 - Article
AN - SCOPUS:85013254078
VL - 43
SP - 46
EP - 49
JO - Technical Physics Letters
JF - Technical Physics Letters
SN - 1063-7850
IS - 1
ER -
ID: 9079170