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Radiation enhancement in doped AlGaN-structures upon optical pumping. / Bokhan, P. A.; Zhuravlev, K. S.; Zakrevsky, D. E. et al.

In: Technical Physics Letters, Vol. 43, No. 1, 01.01.2017, p. 46-49.

Research output: Contribution to journal › Article › peer-review

Harvard

Bokhan, PA, Zhuravlev, KS, Zakrevsky, DE, Malin, TV, Osinnykh, IV & Fateev, NV 2017, 'Radiation enhancement in doped AlGaN-structures upon optical pumping', Technical Physics Letters, vol. 43, no. 1, pp. 46-49. https://doi.org/10.1134/S1063785017010059

APA

Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V., & Fateev, N. V. (2017). Radiation enhancement in doped AlGaN-structures upon optical pumping. Technical Physics Letters, 43(1), 46-49. https://doi.org/10.1134/S1063785017010059

Vancouver

Bokhan PA, Zhuravlev KS, Zakrevsky DE, Malin TV, Osinnykh IV, Fateev NV. Radiation enhancement in doped AlGaN-structures upon optical pumping. Technical Physics Letters. 2017 Jan 1;43(1):46-49. doi: 10.1134/S1063785017010059

Author

Bokhan, P. A. ; Zhuravlev, K. S. ; Zakrevsky, D. E. et al. / Radiation enhancement in doped AlGaN-structures upon optical pumping. In: Technical Physics Letters. 2017 ; Vol. 43, No. 1. pp. 46-49.

BibTeX

@article{8f4374e2f0f44e81bc9631c9809b7c78,
title = "Radiation enhancement in doped AlGaN-structures upon optical pumping",
abstract = "Spectral characteristics of spontaneous and stimulated luminescence have been studied for molecular beam epitaxy synthesized AlxGa1–xN/AlN solid solutions with x = 0.5 and 0.74 upon optical pumping by pulse laser radiation with λ = 266 nm. Broadband radiation spectra with a width of ~260 THz for Al0.5Ga0.5N and ~360 THz for Al0.74Ga0.26N have been obtained. The measured enhancement factors are g ≈ 70 cm–1 for Al0.5Ga0.5N at λ ≈ 528 nm and g ≈ 20 cm–1 for Al0.74Ga0.26N at λ ≈ 468 nm.",
keywords = "MOLECULAR-BEAM EPITAXY",
author = "Bokhan, {P. A.} and Zhuravlev, {K. S.} and Zakrevsky, {D. E.} and Malin, {T. V.} and Osinnykh, {I. V.} and Fateev, {N. V.}",
year = "2017",
month = jan,
day = "1",
doi = "10.1134/S1063785017010059",
language = "English",
volume = "43",
pages = "46--49",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "1",

}

RIS

TY - JOUR

T1 - Radiation enhancement in doped AlGaN-structures upon optical pumping

AU - Bokhan, P. A.

AU - Zhuravlev, K. S.

AU - Zakrevsky, D. E.

AU - Malin, T. V.

AU - Osinnykh, I. V.

AU - Fateev, N. V.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Spectral characteristics of spontaneous and stimulated luminescence have been studied for molecular beam epitaxy synthesized AlxGa1–xN/AlN solid solutions with x = 0.5 and 0.74 upon optical pumping by pulse laser radiation with λ = 266 nm. Broadband radiation spectra with a width of ~260 THz for Al0.5Ga0.5N and ~360 THz for Al0.74Ga0.26N have been obtained. The measured enhancement factors are g ≈ 70 cm–1 for Al0.5Ga0.5N at λ ≈ 528 nm and g ≈ 20 cm–1 for Al0.74Ga0.26N at λ ≈ 468 nm.

AB - Spectral characteristics of spontaneous and stimulated luminescence have been studied for molecular beam epitaxy synthesized AlxGa1–xN/AlN solid solutions with x = 0.5 and 0.74 upon optical pumping by pulse laser radiation with λ = 266 nm. Broadband radiation spectra with a width of ~260 THz for Al0.5Ga0.5N and ~360 THz for Al0.74Ga0.26N have been obtained. The measured enhancement factors are g ≈ 70 cm–1 for Al0.5Ga0.5N at λ ≈ 528 nm and g ≈ 20 cm–1 for Al0.74Ga0.26N at λ ≈ 468 nm.

KW - MOLECULAR-BEAM EPITAXY

UR - http://www.scopus.com/inward/record.url?scp=85013254078&partnerID=8YFLogxK

U2 - 10.1134/S1063785017010059

DO - 10.1134/S1063785017010059

M3 - Article

AN - SCOPUS:85013254078

VL - 43

SP - 46

EP - 49

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 1

ER -

ID: 9079170