Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Quantum Transport of Dirac Fermions in HgTe Gapless Quantum Wells. / Gusev, Gennady M.; Levin, Alexander D.; Kozlov, Dmitry A. и др.
в: Nanomaterials, Том 12, № 12, 2047, 01.06.2022.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Quantum Transport of Dirac Fermions in HgTe Gapless Quantum Wells
AU - Gusev, Gennady M.
AU - Levin, Alexander D.
AU - Kozlov, Dmitry A.
AU - Kvon, Ze D.
AU - Mikhailov, Nikolay N.
N1 - Funding Information: Funding: The financial support of this work by Ministry of Science and Higher Education of the Russian Federation, Sao Paulo Research Foundation (FAPESP) and the National Council for Scien‐ tific and Technological Development (CNPq) is acknowledged. Publisher Copyright: © 2022 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2022/6/1
Y1 - 2022/6/1
N2 - We study the transport properties of HgTe quantum wells with critical well thickness, where the band gap is closed and the low energy spectrum is described by a single Dirac cone. In this work, we examined both macroscopic and micron‐sized (mesoscopic) samples. In micron‐sized samples, we observe a magnetic‐field‐induced quantized resistance (~h/2e) at Landau filling factor v=0, corresponding to the formation of helical edge states centered at the charge neutrality point (CNP). In macroscopic samples, the resistance near a zero Landau level (LL) reveals strong oscillations, which we attribute to scattering between the edge v=0 state and bulk v≠0 hole LL. We provide a model taking an empirical approach to construct a LL diagram based on a reservoir scenario, formed by the heavy holes.
AB - We study the transport properties of HgTe quantum wells with critical well thickness, where the band gap is closed and the low energy spectrum is described by a single Dirac cone. In this work, we examined both macroscopic and micron‐sized (mesoscopic) samples. In micron‐sized samples, we observe a magnetic‐field‐induced quantized resistance (~h/2e) at Landau filling factor v=0, corresponding to the formation of helical edge states centered at the charge neutrality point (CNP). In macroscopic samples, the resistance near a zero Landau level (LL) reveals strong oscillations, which we attribute to scattering between the edge v=0 state and bulk v≠0 hole LL. We provide a model taking an empirical approach to construct a LL diagram based on a reservoir scenario, formed by the heavy holes.
KW - HgTe quantum well
KW - Landau levels
KW - quantum transport
UR - http://www.scopus.com/inward/record.url?scp=85135249543&partnerID=8YFLogxK
U2 - 10.3390/nano12122047
DO - 10.3390/nano12122047
M3 - Article
C2 - 35745386
AN - SCOPUS:85135249543
VL - 12
JO - Nanomaterials
JF - Nanomaterials
SN - 2079-4991
IS - 12
M1 - 2047
ER -
ID: 36742930