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Quantum Transport of Dirac Fermions in HgTe Gapless Quantum Wells. / Gusev, Gennady M.; Levin, Alexander D.; Kozlov, Dmitry A. et al.

In: Nanomaterials, Vol. 12, No. 12, 2047, 01.06.2022.

Research output: Contribution to journal › Article › peer-review

Harvard

Gusev, GM, Levin, AD, Kozlov, DA, Kvon, ZD & Mikhailov, NN 2022, 'Quantum Transport of Dirac Fermions in HgTe Gapless Quantum Wells', Nanomaterials, vol. 12, no. 12, 2047. https://doi.org/10.3390/nano12122047

APA

Gusev, G. M., Levin, A. D., Kozlov, D. A., Kvon, Z. D., & Mikhailov, N. N. (2022). Quantum Transport of Dirac Fermions in HgTe Gapless Quantum Wells. Nanomaterials, 12(12), [2047]. https://doi.org/10.3390/nano12122047

Vancouver

Gusev GM, Levin AD, Kozlov DA, Kvon ZD, Mikhailov NN. Quantum Transport of Dirac Fermions in HgTe Gapless Quantum Wells. Nanomaterials. 2022 Jun 1;12(12):2047. doi: 10.3390/nano12122047

Author

Gusev, Gennady M. ; Levin, Alexander D. ; Kozlov, Dmitry A. et al. / Quantum Transport of Dirac Fermions in HgTe Gapless Quantum Wells. In: Nanomaterials. 2022 ; Vol. 12, No. 12.

BibTeX

@article{69f553d020784af29539ea284c1755b5,
title = "Quantum Transport of Dirac Fermions in HgTe Gapless Quantum Wells",
abstract = "We study the transport properties of HgTe quantum wells with critical well thickness, where the band gap is closed and the low energy spectrum is described by a single Dirac cone. In this work, we examined both macroscopic and micron‐sized (mesoscopic) samples. In micron‐sized samples, we observe a magnetic‐field‐induced quantized resistance (~h/2e) at Landau filling factor v=0, corresponding to the formation of helical edge states centered at the charge neutrality point (CNP). In macroscopic samples, the resistance near a zero Landau level (LL) reveals strong oscillations, which we attribute to scattering between the edge v=0 state and bulk v≠0 hole LL. We provide a model taking an empirical approach to construct a LL diagram based on a reservoir scenario, formed by the heavy holes.",
keywords = "HgTe quantum well, Landau levels, quantum transport",
author = "Gusev, {Gennady M.} and Levin, {Alexander D.} and Kozlov, {Dmitry A.} and Kvon, {Ze D.} and Mikhailov, {Nikolay N.}",
note = "Funding Information: Funding: The financial support of this work by Ministry of Science and Higher Education of the Russian Federation, Sao Paulo Research Foundation (FAPESP) and the National Council for Scien‐ tific and Technological Development (CNPq) is acknowledged. Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",
year = "2022",
month = jun,
day = "1",
doi = "10.3390/nano12122047",
language = "English",
volume = "12",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "MDPI AG",
number = "12",

}

RIS

TY - JOUR

T1 - Quantum Transport of Dirac Fermions in HgTe Gapless Quantum Wells

AU - Gusev, Gennady M.

AU - Levin, Alexander D.

AU - Kozlov, Dmitry A.

AU - Kvon, Ze D.

AU - Mikhailov, Nikolay N.

N1 - Funding Information: Funding: The financial support of this work by Ministry of Science and Higher Education of the Russian Federation, Sao Paulo Research Foundation (FAPESP) and the National Council for Scien‐ tific and Technological Development (CNPq) is acknowledged. Publisher Copyright: © 2022 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2022/6/1

Y1 - 2022/6/1

N2 - We study the transport properties of HgTe quantum wells with critical well thickness, where the band gap is closed and the low energy spectrum is described by a single Dirac cone. In this work, we examined both macroscopic and micron‐sized (mesoscopic) samples. In micron‐sized samples, we observe a magnetic‐field‐induced quantized resistance (~h/2e) at Landau filling factor v=0, corresponding to the formation of helical edge states centered at the charge neutrality point (CNP). In macroscopic samples, the resistance near a zero Landau level (LL) reveals strong oscillations, which we attribute to scattering between the edge v=0 state and bulk v≠0 hole LL. We provide a model taking an empirical approach to construct a LL diagram based on a reservoir scenario, formed by the heavy holes.

AB - We study the transport properties of HgTe quantum wells with critical well thickness, where the band gap is closed and the low energy spectrum is described by a single Dirac cone. In this work, we examined both macroscopic and micron‐sized (mesoscopic) samples. In micron‐sized samples, we observe a magnetic‐field‐induced quantized resistance (~h/2e) at Landau filling factor v=0, corresponding to the formation of helical edge states centered at the charge neutrality point (CNP). In macroscopic samples, the resistance near a zero Landau level (LL) reveals strong oscillations, which we attribute to scattering between the edge v=0 state and bulk v≠0 hole LL. We provide a model taking an empirical approach to construct a LL diagram based on a reservoir scenario, formed by the heavy holes.

KW - HgTe quantum well

KW - Landau levels

KW - quantum transport

UR - http://www.scopus.com/inward/record.url?scp=85135249543&partnerID=8YFLogxK

U2 - 10.3390/nano12122047

DO - 10.3390/nano12122047

M3 - Article

C2 - 35745386

AN - SCOPUS:85135249543

VL - 12

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 12

M1 - 2047

ER -

ID: 36742930