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Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN : Si layers. / Osinnykh, I. V.; Malin, T. V.; Plyusnin, V. F. и др.

в: Journal of Physics: Conference Series, Том 864, № 1, 012071, 15.08.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Osinnykh, IV, Malin, TV, Plyusnin, VF & Zhuravlev, KS 2017, 'Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN: Si layers', Journal of Physics: Conference Series, Том. 864, № 1, 012071. https://doi.org/10.1088/1742-6596/864/1/012071

APA

Osinnykh, I. V., Malin, T. V., Plyusnin, V. F., & Zhuravlev, K. S. (2017). Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN: Si layers. Journal of Physics: Conference Series, 864(1), [012071]. https://doi.org/10.1088/1742-6596/864/1/012071

Vancouver

Osinnykh IV, Malin TV, Plyusnin VF, Zhuravlev KS. Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN: Si layers. Journal of Physics: Conference Series. 2017 авг. 15;864(1):012071. doi: 10.1088/1742-6596/864/1/012071

Author

Osinnykh, I. V. ; Malin, T. V. ; Plyusnin, V. F. и др. / Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN : Si layers. в: Journal of Physics: Conference Series. 2017 ; Том 864, № 1.

BibTeX

@article{223741aff51842f3b1c30c861606c221,
title = "Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN: Si layers",
abstract = "We report photoluminescence investigations of heavily doped AlxGa1-xN:Si films grown by molecular beam epitaxy on sapphire substrates. The wide intensive defect-related band dominates in the photoluminescence spectra of AlxGa1-xN:Si films with the Al content higher than 0.38 covering the whole visible spectral range. This band is attributed to donor-acceptor and free electron-acceptor transitions involving the same acceptor. The acceptor ionization energy of about 1.87 eV for heavily doped AlN:Si was obtained, decrease of Al content leads to decrease of the acceptor ionization energy. The donor was assigned to the Si atom on the Ga/Al site; the acceptor might be (0/-) transition level of the CN or (2-/3-) transition level of the VAl.",
keywords = "GAN, ALN, SI",
author = "Osinnykh, {I. V.} and Malin, {T. V.} and Plyusnin, {V. F.} and Zhuravlev, {K. S.}",
note = "Funding Information: Russian Foundation for Basic Research (grants no. 16-32-00773, 16-32-",
year = "2017",
month = aug,
day = "15",
doi = "10.1088/1742-6596/864/1/012071",
language = "English",
volume = "864",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN

T2 - Si layers

AU - Osinnykh, I. V.

AU - Malin, T. V.

AU - Plyusnin, V. F.

AU - Zhuravlev, K. S.

N1 - Funding Information: Russian Foundation for Basic Research (grants no. 16-32-00773, 16-32-

PY - 2017/8/15

Y1 - 2017/8/15

N2 - We report photoluminescence investigations of heavily doped AlxGa1-xN:Si films grown by molecular beam epitaxy on sapphire substrates. The wide intensive defect-related band dominates in the photoluminescence spectra of AlxGa1-xN:Si films with the Al content higher than 0.38 covering the whole visible spectral range. This band is attributed to donor-acceptor and free electron-acceptor transitions involving the same acceptor. The acceptor ionization energy of about 1.87 eV for heavily doped AlN:Si was obtained, decrease of Al content leads to decrease of the acceptor ionization energy. The donor was assigned to the Si atom on the Ga/Al site; the acceptor might be (0/-) transition level of the CN or (2-/3-) transition level of the VAl.

AB - We report photoluminescence investigations of heavily doped AlxGa1-xN:Si films grown by molecular beam epitaxy on sapphire substrates. The wide intensive defect-related band dominates in the photoluminescence spectra of AlxGa1-xN:Si films with the Al content higher than 0.38 covering the whole visible spectral range. This band is attributed to donor-acceptor and free electron-acceptor transitions involving the same acceptor. The acceptor ionization energy of about 1.87 eV for heavily doped AlN:Si was obtained, decrease of Al content leads to decrease of the acceptor ionization energy. The donor was assigned to the Si atom on the Ga/Al site; the acceptor might be (0/-) transition level of the CN or (2-/3-) transition level of the VAl.

KW - GAN

KW - ALN

KW - SI

UR - http://www.scopus.com/inward/record.url?scp=85028744955&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/864/1/012071

DO - 10.1088/1742-6596/864/1/012071

M3 - Article

AN - SCOPUS:85028744955

VL - 864

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012071

ER -

ID: 9561683