Research output: Contribution to journal › Article › peer-review
Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN : Si layers. / Osinnykh, I. V.; Malin, T. V.; Plyusnin, V. F. et al.
In: Journal of Physics: Conference Series, Vol. 864, No. 1, 012071, 15.08.2017.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN
T2 - Si layers
AU - Osinnykh, I. V.
AU - Malin, T. V.
AU - Plyusnin, V. F.
AU - Zhuravlev, K. S.
N1 - Funding Information: Russian Foundation for Basic Research (grants no. 16-32-00773, 16-32-
PY - 2017/8/15
Y1 - 2017/8/15
N2 - We report photoluminescence investigations of heavily doped AlxGa1-xN:Si films grown by molecular beam epitaxy on sapphire substrates. The wide intensive defect-related band dominates in the photoluminescence spectra of AlxGa1-xN:Si films with the Al content higher than 0.38 covering the whole visible spectral range. This band is attributed to donor-acceptor and free electron-acceptor transitions involving the same acceptor. The acceptor ionization energy of about 1.87 eV for heavily doped AlN:Si was obtained, decrease of Al content leads to decrease of the acceptor ionization energy. The donor was assigned to the Si atom on the Ga/Al site; the acceptor might be (0/-) transition level of the CN or (2-/3-) transition level of the VAl.
AB - We report photoluminescence investigations of heavily doped AlxGa1-xN:Si films grown by molecular beam epitaxy on sapphire substrates. The wide intensive defect-related band dominates in the photoluminescence spectra of AlxGa1-xN:Si films with the Al content higher than 0.38 covering the whole visible spectral range. This band is attributed to donor-acceptor and free electron-acceptor transitions involving the same acceptor. The acceptor ionization energy of about 1.87 eV for heavily doped AlN:Si was obtained, decrease of Al content leads to decrease of the acceptor ionization energy. The donor was assigned to the Si atom on the Ga/Al site; the acceptor might be (0/-) transition level of the CN or (2-/3-) transition level of the VAl.
KW - GAN
KW - ALN
KW - SI
UR - http://www.scopus.com/inward/record.url?scp=85028744955&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/864/1/012071
DO - 10.1088/1742-6596/864/1/012071
M3 - Article
AN - SCOPUS:85028744955
VL - 864
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012071
ER -
ID: 9561683