Possibilities of Characterizing the Crystal Parameters of Cd xHg1 – xTe Structures on GaAs Substrates by the Method of Generation of the Probe-Radiation Second Harmonic in Reflection Geometry

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Possibilities of Characterizing the Crystal Parameters of Cd_xHg_1 – _xTe Structures on GaAs Substrates by the Method of Generation of the Probe-Radiation Second Harmonic in Reflection Geometry. / Stupak, M. F.; Mikhailov, N. N.; Dvoretskii, S. A. и др.

в: Physics of the Solid State, Том 62, № 2, 28.02.2020, стр. 252-259.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{5ec0ee044d1f413b92de87109aef38bb,

title = "Possibilities of Characterizing the Crystal Parameters of Cd xHg1 – xTe Structures on GaAs Substrates by the Method of Generation of the Probe-Radiation Second Harmonic in Reflection Geometry",

abstract = "Results of numerical simulation and experimental data on recording azimuthal angular dependences of a second-harmonic signal reflected from CdxHg1 – xTe structures and GaAs substrates at normal incidence of probe laser radiation on the sample and azimuthal rotation of its polarization plane have been compared. It is found proceeding from the results of studying (013)GaAs substrates and CdTe|ZnTe|GaAs buffer layers that deviations from the (013) surface orientation were 1°–3° (in crystallophysical angles Θ and φ) for GaAs substrates and up to 8° for CdTe|ZnTe|GaAs buffer layers; the magnitude of the second-harmonic signal from the buffer layers can be assumed inversely proportional to the FWHM of X-ray rocking curves. It is shown based on the experimental data that components of the nonlinear susceptibility tensor χxyz(ω) of the CdxHg1 – xTe crystal structure are much larger than those for CdTe and GaAs.",

keywords = "azimuthal angular dependences, CdHg Te structure, GaAs substrates, noncentrosymmetric sphalerite-type crystals, second harmonic, CdxHg1- Te-x structure, DISLOCATIONS, HETEROEPITAXIAL STRUCTURES",

author = "Stupak, {M. F.} and Mikhailov, {N. N.} and Dvoretskii, {S. A.} and Yakushev, {M. V.} and Ikusov, {D. G.} and Makarov, {S. N.} and Elesin, {A. G.} and Verkhoglyad, {A. G.}",

year = "2020",

month = feb,

day = "28",

doi = "10.1134/S1063783420020201",

language = "English",

volume = "62",

pages = "252--259",

journal = "Physics of the Solid State",

issn = "1063-7834",

publisher = "PLEIADES PUBLISHING INC",

number = "2",

}

RIS

TY - JOUR

T1 - Possibilities of Characterizing the Crystal Parameters of Cd xHg1 – xTe Structures on GaAs Substrates by the Method of Generation of the Probe-Radiation Second Harmonic in Reflection Geometry

AU - Stupak, M. F.

AU - Mikhailov, N. N.

AU - Dvoretskii, S. A.

AU - Yakushev, M. V.

AU - Ikusov, D. G.

AU - Makarov, S. N.

AU - Elesin, A. G.

AU - Verkhoglyad, A. G.

PY - 2020/2/28

Y1 - 2020/2/28

N2 - Results of numerical simulation and experimental data on recording azimuthal angular dependences of a second-harmonic signal reflected from CdxHg1 – xTe structures and GaAs substrates at normal incidence of probe laser radiation on the sample and azimuthal rotation of its polarization plane have been compared. It is found proceeding from the results of studying (013)GaAs substrates and CdTe|ZnTe|GaAs buffer layers that deviations from the (013) surface orientation were 1°–3° (in crystallophysical angles Θ and φ) for GaAs substrates and up to 8° for CdTe|ZnTe|GaAs buffer layers; the magnitude of the second-harmonic signal from the buffer layers can be assumed inversely proportional to the FWHM of X-ray rocking curves. It is shown based on the experimental data that components of the nonlinear susceptibility tensor χxyz(ω) of the CdxHg1 – xTe crystal structure are much larger than those for CdTe and GaAs.

AB - Results of numerical simulation and experimental data on recording azimuthal angular dependences of a second-harmonic signal reflected from CdxHg1 – xTe structures and GaAs substrates at normal incidence of probe laser radiation on the sample and azimuthal rotation of its polarization plane have been compared. It is found proceeding from the results of studying (013)GaAs substrates and CdTe|ZnTe|GaAs buffer layers that deviations from the (013) surface orientation were 1°–3° (in crystallophysical angles Θ and φ) for GaAs substrates and up to 8° for CdTe|ZnTe|GaAs buffer layers; the magnitude of the second-harmonic signal from the buffer layers can be assumed inversely proportional to the FWHM of X-ray rocking curves. It is shown based on the experimental data that components of the nonlinear susceptibility tensor χxyz(ω) of the CdxHg1 – xTe crystal structure are much larger than those for CdTe and GaAs.

KW - azimuthal angular dependences

KW - CdHg Te structure

KW - GaAs substrates

KW - noncentrosymmetric sphalerite-type crystals

KW - second harmonic

KW - CdxHg1- Te-x structure

KW - DISLOCATIONS

KW - HETEROEPITAXIAL STRUCTURES

UR - http://www.scopus.com/inward/record.url?scp=85080112341&partnerID=8YFLogxK

U2 - 10.1134/S1063783420020201

DO - 10.1134/S1063783420020201

M3 - Article

AN - SCOPUS:85080112341

VL - 62

SP - 252

EP - 259

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 2

ER -

ID: 23664870