TY - GEN

T1 - Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications

AU - Volodin, V. A.

AU - Krivyakin, G. K.

AU - Bulgakov, A. V.

AU - Levy, Y.

AU - Beránek, J.

AU - Nagisetty, S.

AU - Bryknar, Z.

AU - Bulgakova, N. M.

AU - Geydt, P. V.

AU - Popov, A. A.

N1 - Funding Information: This work was supported by the Ministry of Education and Science of the Russian Federation, grant FSUS-2020-0029. A.V.B., Y.L., J.B., S.N. and N.M.B. acknowledge the support of the European Regional Development Fund and the state budget of the Czech Republic (project BIATRI: No. CZ.02.1.01/0.0/0.0/15_003/0000445, project HiLASE CoE: No. CZ.02.1.01/0.0/0.0/15_006/0000674, programme NPU I: project No.LO1602). The research of Z.B. has been supported by the European Structural and Investment Funds and the state budget of the Czech Republic within Center of Advanced Applied Sciences, Reg. No. CZ.02.1.01/0.0/0.0/16_019/0000778. The work of J.B. was also partially supported by the Grant Agency of the Czech Technical University in Prague No.SGS19/188/OHK4/3T/14. Publisher Copyright: © 2022 SPIE.

PY - 2022

Y1 - 2022

N2 - The processes involved in picosecond infrared pulsed laser annealing of multylayer structures consisting of alternating thin films of amorphous silicon and germanium were investigated. The films were fabricated by plasma-chemical deposition on Si(001) and glass substrates. An analysis of structural transformation of Ge/Si multi-nanolayers was performed using Raman spectroscopy. Regimes of annealing were found when the Ge layers are partially crystallized while the Si layers remain amorphous without noticeable intermixing of Ge and Si. The developed approach can be used for creation of GeSi solid alloys (which can be used in memristors on not refractive substrates) and also for creation of Si based p-i-n structures on non-refractory substrates with Ge nanoclusters in i-layer, that can enhance the efficiency of thin film solar cells.

AB - The processes involved in picosecond infrared pulsed laser annealing of multylayer structures consisting of alternating thin films of amorphous silicon and germanium were investigated. The films were fabricated by plasma-chemical deposition on Si(001) and glass substrates. An analysis of structural transformation of Ge/Si multi-nanolayers was performed using Raman spectroscopy. Regimes of annealing were found when the Ge layers are partially crystallized while the Si layers remain amorphous without noticeable intermixing of Ge and Si. The developed approach can be used for creation of GeSi solid alloys (which can be used in memristors on not refractive substrates) and also for creation of Si based p-i-n structures on non-refractory substrates with Ge nanoclusters in i-layer, that can enhance the efficiency of thin film solar cells.

KW - Ge/Si multi-nanolayers

KW - Nonlinear effects in light absorption

KW - Picosecond infrared pulsed laser annealing

KW - Raman spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85125629463&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/66908922-d10c-3461-9c6e-938f4f94aa9d/

U2 - 10.1117/12.2622731

DO - 10.1117/12.2622731

M3 - Conference contribution

AN - SCOPUS:85125629463

SN - 9781510651906

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - International Conference on Micro- and Nano-Electronics 2021

A2 - Lukichev, Vladimir F.

A2 - Rudenko, Konstantin V.

PB - SPIE

T2 - 14th International Conference on Micro- and Nano-Electronics 2021, ICMNE 2021

Y2 - 4 October 2021 through 8 October 2021

ER -