Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
Oxygen polyvacancies as conductive filament in zirconia : First principle simulation. / Perevalov, T. V.; Islamov, D. R.
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. ред. / D Misra; S DeGendt; M Houssa; K Kita; D Landheer. Том 80 1. ред. Electrochemical Society, Inc., 2017. стр. 357-362 (ECS Transactions; Том 80).Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
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TY - GEN
T1 - Oxygen polyvacancies as conductive filament in zirconia
T2 - 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting
AU - Perevalov, T. V.
AU - Islamov, D. R.
N1 - Publisher Copyright: © The Electrochemical Society.
PY - 2017/1/1
Y1 - 2017/1/1
N2 - The atomic and electronic structure of oxygen vacancy and polyvacancy in the cubic, tetragonal and monoclinic zirconium oxide were investigated using quantum-chemical density functional theory simulation. It is shown that the neutral oxygen vacancy in crystalline zirconia can act as electron and hole trap. An electron added to ZrO2 structure with the oxygen monovacancy has a bonding charge density character. The defect levels position as well as thermal and optical trap ionization energies are consisted with the previously defined experimentally values. Each subsequent vacancy is formed near the already existing one, and no more than 2 removed oxygen atoms are related to Zr atom. The levels from oxygen polyvacancies are distributed in the bandgap preferentially localized close to the monovacancy level. The ability of oxygen vacancy chain in crystalline ZrO2 to act as a conductive filament is discussed.
AB - The atomic and electronic structure of oxygen vacancy and polyvacancy in the cubic, tetragonal and monoclinic zirconium oxide were investigated using quantum-chemical density functional theory simulation. It is shown that the neutral oxygen vacancy in crystalline zirconia can act as electron and hole trap. An electron added to ZrO2 structure with the oxygen monovacancy has a bonding charge density character. The defect levels position as well as thermal and optical trap ionization energies are consisted with the previously defined experimentally values. Each subsequent vacancy is formed near the already existing one, and no more than 2 removed oxygen atoms are related to Zr atom. The levels from oxygen polyvacancies are distributed in the bandgap preferentially localized close to the monovacancy level. The ability of oxygen vacancy chain in crystalline ZrO2 to act as a conductive filament is discussed.
KW - ZRO2
KW - DEFECTS
UR - http://www.scopus.com/inward/record.url?scp=85050021862&partnerID=8YFLogxK
U2 - 10.1149/08001.0357ecst
DO - 10.1149/08001.0357ecst
M3 - Conference contribution
AN - SCOPUS:85050021862
SN - 978-1-62332-470-4
VL - 80
T3 - ECS Transactions
SP - 357
EP - 362
BT - SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR
A2 - Misra, D
A2 - DeGendt, S
A2 - Houssa, M
A2 - Kita, K
A2 - Landheer, D
PB - Electrochemical Society, Inc.
Y2 - 1 October 2017 through 5 October 2017
ER -
ID: 14883561