Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Overgrowth of N-Polar Inversion Domains in AlxGa1-xN Layers with Different Aluminum Content. / Осинных, Игорь Васильевич; Malin, Timur V.; Gilinsky, A. M. и др.
в: Optoelectronics, Instrumentation and Data Processing, Том 61, № 6, 12.2025, стр. 729-736.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Overgrowth of N-Polar Inversion Domains in AlxGa1-xN Layers with Different Aluminum Content
AU - Осинных, Игорь Васильевич
AU - Malin, Timur V.
AU - Gilinsky, A. M.
AU - Протасов, Д.Ю.
AU - Vdovin, V. I.
N1 - Osinnykh, I.V., Malin, T.V., Gilinsky, A.M. et al. Overgrowth of N-Polar Inversion Domains in AlxGa1-xN Layers with Different Aluminum Content. Optoelectron.Instrument.Proc. 61, 729–736 (2025).
PY - 2025/12
Y1 - 2025/12
N2 - This paper presents the results of studying AlxGa1-xN layers grown by molecular beam epitaxy ay different molar content of aluminum on Al2O3 substrates by scanning electron microscopy and transmission electron microscopy. It is shown that the inversion domains in the AlN buffer layers do not grow to the film surface during the further growth of AlxGa1-xN layers with a molar aluminum content x≤0.2. In the layers with a molar aluminum content 0.2≤x≤0.5 above the inversion domains, bulk plateau-shaped defects are formed to extend to the depth more than 200 nm and, at x≤0.5, the plateau-shaped defects grow through the entire AlxGa1-xN layer.
AB - This paper presents the results of studying AlxGa1-xN layers grown by molecular beam epitaxy ay different molar content of aluminum on Al2O3 substrates by scanning electron microscopy and transmission electron microscopy. It is shown that the inversion domains in the AlN buffer layers do not grow to the film surface during the further growth of AlxGa1-xN layers with a molar aluminum content x≤0.2. In the layers with a molar aluminum content 0.2≤x≤0.5 above the inversion domains, bulk plateau-shaped defects are formed to extend to the depth more than 200 nm and, at x≤0.5, the plateau-shaped defects grow through the entire AlxGa1-xN layer.
UR - https://www.scopus.com/pages/publications/105034893871
U2 - 10.3103/S8756699025700839
DO - 10.3103/S8756699025700839
M3 - Article
VL - 61
SP - 729
EP - 736
JO - Optoelectronics, Instrumentation and Data Processing
JF - Optoelectronics, Instrumentation and Data Processing
SN - 8756-6990
IS - 6
ER -
ID: 76001708