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Overgrowth of N-Polar Inversion Domains in AlxGa1-xN Layers with Different Aluminum Content. / Осинных, Игорь Васильевич; Malin, Timur V.; Gilinsky, A. M. et al.

In: Optoelectronics, Instrumentation and Data Processing, Vol. 61, No. 6, 12.2025, p. 729-736.

Research output: Contribution to journal › Article › peer-review

Harvard

Осинных, ИВ, Malin, TV, Gilinsky, AM, Протасов, ДЮ & Vdovin, VI 2025, 'Overgrowth of N-Polar Inversion Domains in AlxGa1-xN Layers with Different Aluminum Content', Optoelectronics, Instrumentation and Data Processing, vol. 61, no. 6, pp. 729-736. https://doi.org/10.3103/S8756699025700839

APA

Осинных, И. В., Malin, T. V., Gilinsky, A. M., Протасов, Д. Ю., & Vdovin, V. I. (2025). Overgrowth of N-Polar Inversion Domains in AlxGa1-xN Layers with Different Aluminum Content. Optoelectronics, Instrumentation and Data Processing, 61(6), 729-736. https://doi.org/10.3103/S8756699025700839

Vancouver

Осинных ИВ, Malin TV, Gilinsky AM, Протасов ДЮ, Vdovin VI. Overgrowth of N-Polar Inversion Domains in AlxGa1-xN Layers with Different Aluminum Content. Optoelectronics, Instrumentation and Data Processing. 2025 Dec;61(6):729-736. doi: 10.3103/S8756699025700839

Author

Осинных, Игорь Васильевич ; Malin, Timur V. ; Gilinsky, A. M. et al. / Overgrowth of N-Polar Inversion Domains in AlxGa1-xN Layers with Different Aluminum Content. In: Optoelectronics, Instrumentation and Data Processing. 2025 ; Vol. 61, No. 6. pp. 729-736.

BibTeX

@article{e6aa38f1125847a092a06838eaea86f6,
title = "Overgrowth of N-Polar Inversion Domains in AlxGa1-xN Layers with Different Aluminum Content",
abstract = "This paper presents the results of studying AlxGa1-xN layers grown by molecular beam epitaxy ay different molar content of aluminum on Al2O3 substrates by scanning electron microscopy and transmission electron microscopy. It is shown that the inversion domains in the AlN buffer layers do not grow to the film surface during the further growth of AlxGa1-xN layers with a molar aluminum content x≤0.2. In the layers with a molar aluminum content 0.2≤x≤0.5 above the inversion domains, bulk plateau-shaped defects are formed to extend to the depth more than 200 nm and, at x≤0.5, the plateau-shaped defects grow through the entire AlxGa1-xN layer.",
author = "Осинных, {Игорь Васильевич} and Malin, {Timur V.} and Gilinsky, {A. M.} and Д.Ю. Протасов and Vdovin, {V. I.}",
note = "Osinnykh, I.V., Malin, T.V., Gilinsky, A.M. et al. Overgrowth of N-Polar Inversion Domains in AlxGa1-xN Layers with Different Aluminum Content. Optoelectron.Instrument.Proc. 61, 729–736 (2025).",
year = "2025",
month = dec,
doi = "10.3103/S8756699025700839",
language = "English",
volume = "61",
pages = "729--736",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "6",

}

RIS

TY - JOUR

T1 - Overgrowth of N-Polar Inversion Domains in AlxGa1-xN Layers with Different Aluminum Content

AU - Осинных, Игорь Васильевич

AU - Malin, Timur V.

AU - Gilinsky, A. M.

AU - Протасов, Д.Ю.

AU - Vdovin, V. I.

N1 - Osinnykh, I.V., Malin, T.V., Gilinsky, A.M. et al. Overgrowth of N-Polar Inversion Domains in AlxGa1-xN Layers with Different Aluminum Content. Optoelectron.Instrument.Proc. 61, 729–736 (2025).

PY - 2025/12

Y1 - 2025/12

N2 - This paper presents the results of studying AlxGa1-xN layers grown by molecular beam epitaxy ay different molar content of aluminum on Al2O3 substrates by scanning electron microscopy and transmission electron microscopy. It is shown that the inversion domains in the AlN buffer layers do not grow to the film surface during the further growth of AlxGa1-xN layers with a molar aluminum content x≤0.2. In the layers with a molar aluminum content 0.2≤x≤0.5 above the inversion domains, bulk plateau-shaped defects are formed to extend to the depth more than 200 nm and, at x≤0.5, the plateau-shaped defects grow through the entire AlxGa1-xN layer.

AB - This paper presents the results of studying AlxGa1-xN layers grown by molecular beam epitaxy ay different molar content of aluminum on Al2O3 substrates by scanning electron microscopy and transmission electron microscopy. It is shown that the inversion domains in the AlN buffer layers do not grow to the film surface during the further growth of AlxGa1-xN layers with a molar aluminum content x≤0.2. In the layers with a molar aluminum content 0.2≤x≤0.5 above the inversion domains, bulk plateau-shaped defects are formed to extend to the depth more than 200 nm and, at x≤0.5, the plateau-shaped defects grow through the entire AlxGa1-xN layer.

UR - https://www.scopus.com/pages/publications/105034893871

U2 - 10.3103/S8756699025700839

DO - 10.3103/S8756699025700839

M3 - Article

VL - 61

SP - 729

EP - 736

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 6

ER -

ID: 76001708