Результаты исследований: Научные публикации в периодических изданиях › статья по материалам конференции › Рецензирование
Optimization of conditions for thermal smoothing GaAs surfaces. / Akhundov, I. O.; Kazantsev, D. M.; Kozhuhov, A. S. и др.
в: Journal of Physics: Conference Series, Том 993, № 1, 012010, 10.04.2018.Результаты исследований: Научные публикации в периодических изданиях › статья по материалам конференции › Рецензирование
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TY - JOUR
T1 - Optimization of conditions for thermal smoothing GaAs surfaces
AU - Akhundov, I. O.
AU - Kazantsev, D. M.
AU - Kozhuhov, A. S.
AU - Alperovich, V. L.
N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.
PY - 2018/4/10
Y1 - 2018/4/10
N2 - GaAs thermal smoothing by annealing in conditions which are close to equilibrium between the surface and vapors of As and Ga was earlier proved to be effective for the step-terraced surface formation on epi-ready substrates with a small root-mean-square roughness (Rq ≤ 0.15 nm). In the present study, this technique is further developed in order to reduce the annealing duration and to smooth GaAs samples with a larger initial roughness. To this end, we proposed a two-stage anneal with the first high-temperature stage aimed at smoothing «coarse» relief features and the second stage focused on «fine» smoothing at a lower temperature. The optimal temperatures and durations of two-stage annealing are found by Monte Carlo simulations and adjusted after experimentation. It is proved that the temperature and duration of the first high-temperature stage are restricted by the surface roughening, which occurs due to deviations from equilibrium conditions.
AB - GaAs thermal smoothing by annealing in conditions which are close to equilibrium between the surface and vapors of As and Ga was earlier proved to be effective for the step-terraced surface formation on epi-ready substrates with a small root-mean-square roughness (Rq ≤ 0.15 nm). In the present study, this technique is further developed in order to reduce the annealing duration and to smooth GaAs samples with a larger initial roughness. To this end, we proposed a two-stage anneal with the first high-temperature stage aimed at smoothing «coarse» relief features and the second stage focused on «fine» smoothing at a lower temperature. The optimal temperatures and durations of two-stage annealing are found by Monte Carlo simulations and adjusted after experimentation. It is proved that the temperature and duration of the first high-temperature stage are restricted by the surface roughening, which occurs due to deviations from equilibrium conditions.
KW - MONTE-CARLO-SIMULATION
KW - STEPS
UR - http://www.scopus.com/inward/record.url?scp=85046104312&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/993/1/012010
DO - 10.1088/1742-6596/993/1/012010
M3 - Conference article
AN - SCOPUS:85046104312
VL - 993
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012010
T2 - 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017
Y2 - 27 November 2017 through 1 December 2017
ER -
ID: 12916142