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Optimization of conditions for thermal smoothing GaAs surfaces. / Akhundov, I. O.; Kazantsev, D. M.; Kozhuhov, A. S. et al.

In: Journal of Physics: Conference Series, Vol. 993, No. 1, 012010, 10.04.2018.

Research output: Contribution to journalConference articlepeer-review

Harvard

Akhundov, IO, Kazantsev, DM, Kozhuhov, AS & Alperovich, VL 2018, 'Optimization of conditions for thermal smoothing GaAs surfaces', Journal of Physics: Conference Series, vol. 993, no. 1, 012010. https://doi.org/10.1088/1742-6596/993/1/012010

APA

Akhundov, I. O., Kazantsev, D. M., Kozhuhov, A. S., & Alperovich, V. L. (2018). Optimization of conditions for thermal smoothing GaAs surfaces. Journal of Physics: Conference Series, 993(1), [012010]. https://doi.org/10.1088/1742-6596/993/1/012010

Vancouver

Akhundov IO, Kazantsev DM, Kozhuhov AS, Alperovich VL. Optimization of conditions for thermal smoothing GaAs surfaces. Journal of Physics: Conference Series. 2018 Apr 10;993(1):012010. doi: 10.1088/1742-6596/993/1/012010

Author

Akhundov, I. O. ; Kazantsev, D. M. ; Kozhuhov, A. S. et al. / Optimization of conditions for thermal smoothing GaAs surfaces. In: Journal of Physics: Conference Series. 2018 ; Vol. 993, No. 1.

BibTeX

@article{ce1020c0ebdd4fcabcb3ad7a4ec51148,
title = "Optimization of conditions for thermal smoothing GaAs surfaces",
abstract = "GaAs thermal smoothing by annealing in conditions which are close to equilibrium between the surface and vapors of As and Ga was earlier proved to be effective for the step-terraced surface formation on epi-ready substrates with a small root-mean-square roughness (Rq ≤ 0.15 nm). In the present study, this technique is further developed in order to reduce the annealing duration and to smooth GaAs samples with a larger initial roughness. To this end, we proposed a two-stage anneal with the first high-temperature stage aimed at smoothing «coarse» relief features and the second stage focused on «fine» smoothing at a lower temperature. The optimal temperatures and durations of two-stage annealing are found by Monte Carlo simulations and adjusted after experimentation. It is proved that the temperature and duration of the first high-temperature stage are restricted by the surface roughening, which occurs due to deviations from equilibrium conditions.",
keywords = "MONTE-CARLO-SIMULATION, STEPS",
author = "Akhundov, {I. O.} and Kazantsev, {D. M.} and Kozhuhov, {A. S.} and Alperovich, {V. L.}",
note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 ; Conference date: 27-11-2017 Through 01-12-2017",
year = "2018",
month = apr,
day = "10",
doi = "10.1088/1742-6596/993/1/012010",
language = "English",
volume = "993",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Optimization of conditions for thermal smoothing GaAs surfaces

AU - Akhundov, I. O.

AU - Kazantsev, D. M.

AU - Kozhuhov, A. S.

AU - Alperovich, V. L.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2018/4/10

Y1 - 2018/4/10

N2 - GaAs thermal smoothing by annealing in conditions which are close to equilibrium between the surface and vapors of As and Ga was earlier proved to be effective for the step-terraced surface formation on epi-ready substrates with a small root-mean-square roughness (Rq ≤ 0.15 nm). In the present study, this technique is further developed in order to reduce the annealing duration and to smooth GaAs samples with a larger initial roughness. To this end, we proposed a two-stage anneal with the first high-temperature stage aimed at smoothing «coarse» relief features and the second stage focused on «fine» smoothing at a lower temperature. The optimal temperatures and durations of two-stage annealing are found by Monte Carlo simulations and adjusted after experimentation. It is proved that the temperature and duration of the first high-temperature stage are restricted by the surface roughening, which occurs due to deviations from equilibrium conditions.

AB - GaAs thermal smoothing by annealing in conditions which are close to equilibrium between the surface and vapors of As and Ga was earlier proved to be effective for the step-terraced surface formation on epi-ready substrates with a small root-mean-square roughness (Rq ≤ 0.15 nm). In the present study, this technique is further developed in order to reduce the annealing duration and to smooth GaAs samples with a larger initial roughness. To this end, we proposed a two-stage anneal with the first high-temperature stage aimed at smoothing «coarse» relief features and the second stage focused on «fine» smoothing at a lower temperature. The optimal temperatures and durations of two-stage annealing are found by Monte Carlo simulations and adjusted after experimentation. It is proved that the temperature and duration of the first high-temperature stage are restricted by the surface roughening, which occurs due to deviations from equilibrium conditions.

KW - MONTE-CARLO-SIMULATION

KW - STEPS

UR - http://www.scopus.com/inward/record.url?scp=85046104312&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/993/1/012010

DO - 10.1088/1742-6596/993/1/012010

M3 - Conference article

AN - SCOPUS:85046104312

VL - 993

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012010

T2 - 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017

Y2 - 27 November 2017 through 1 December 2017

ER -

ID: 12916142