Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature. / Cherkova, S. G.; Volodin, V. A.; Zhang, Fan и др.
в: Optical Materials, Том 122, 111736, 12.2021.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature
AU - Cherkova, S. G.
AU - Volodin, V. A.
AU - Zhang, Fan
AU - Stoffel, M.
AU - Rinnert, H.
AU - Vergnat, M.
N1 - Publisher Copyright: © 2021 Elsevier B.V.
PY - 2021/12
Y1 - 2021/12
N2 - The optical properties of GeO[SiO] and GeO[SiO2] solid alloy films grown on Si(001) substrates were studied using Raman, Fourier transform infrared absorption (FTIR) and photoluminescence (PL) spectroscopies. A PL signal was observed in the infrared region both for as-deposited and annealed germanium silicate suboxide films. Furnace annealing led to an increase of the PL signal and to a redshift of the PL maximum. The PL at ∼1100 nm is most probably due to defect-induced radiative transitions while the PL at ∼1500 nm may be rather caused by amorphous Ge nanoclusters and Ge nanocrystals. Finally, the temperature dependence of the PL was studied. Anomalous quenching of the PL signal is observed which does not follow the classical Arrhenius law. The temperature dependence of the PL intensity is well explained by using a Berthelot model.
AB - The optical properties of GeO[SiO] and GeO[SiO2] solid alloy films grown on Si(001) substrates were studied using Raman, Fourier transform infrared absorption (FTIR) and photoluminescence (PL) spectroscopies. A PL signal was observed in the infrared region both for as-deposited and annealed germanium silicate suboxide films. Furnace annealing led to an increase of the PL signal and to a redshift of the PL maximum. The PL at ∼1100 nm is most probably due to defect-induced radiative transitions while the PL at ∼1500 nm may be rather caused by amorphous Ge nanoclusters and Ge nanocrystals. Finally, the temperature dependence of the PL was studied. Anomalous quenching of the PL signal is observed which does not follow the classical Arrhenius law. The temperature dependence of the PL intensity is well explained by using a Berthelot model.
KW - Defects
KW - Ge and Si oxides
KW - Nanocrystals
KW - Photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=85118349118&partnerID=8YFLogxK
U2 - 10.1016/j.optmat.2021.111736
DO - 10.1016/j.optmat.2021.111736
M3 - Article
AN - SCOPUS:85118349118
VL - 122
JO - Optical Materials
JF - Optical Materials
SN - 0925-3467
M1 - 111736
ER -
ID: 34600720