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Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature. / Cherkova, S. G.; Volodin, V. A.; Zhang, Fan et al.

In: Optical Materials, Vol. 122, 111736, 12.2021.

Research output: Contribution to journal › Article › peer-review

Harvard

Cherkova, SG, Volodin, VA, Zhang, F, Stoffel, M, Rinnert, H & Vergnat, M 2021, 'Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature', Optical Materials, vol. 122, 111736. https://doi.org/10.1016/j.optmat.2021.111736

APA

Cherkova, S. G., Volodin, V. A., Zhang, F., Stoffel, M., Rinnert, H., & Vergnat, M. (2021). Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature. Optical Materials, 122, [111736]. https://doi.org/10.1016/j.optmat.2021.111736

Vancouver

Cherkova SG, Volodin VA, Zhang F, Stoffel M, Rinnert H, Vergnat M. Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature. Optical Materials. 2021 Dec;122:111736. doi: 10.1016/j.optmat.2021.111736

Author

Cherkova, S. G. ; Volodin, V. A. ; Zhang, Fan et al. / Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature. In: Optical Materials. 2021 ; Vol. 122.

BibTeX

@article{e6a411e3ae3d47568e77cc607a031e66,
title = "Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature",
abstract = "The optical properties of GeO[SiO] and GeO[SiO2] solid alloy films grown on Si(001) substrates were studied using Raman, Fourier transform infrared absorption (FTIR) and photoluminescence (PL) spectroscopies. A PL signal was observed in the infrared region both for as-deposited and annealed germanium silicate suboxide films. Furnace annealing led to an increase of the PL signal and to a redshift of the PL maximum. The PL at ∼1100 nm is most probably due to defect-induced radiative transitions while the PL at ∼1500 nm may be rather caused by amorphous Ge nanoclusters and Ge nanocrystals. Finally, the temperature dependence of the PL was studied. Anomalous quenching of the PL signal is observed which does not follow the classical Arrhenius law. The temperature dependence of the PL intensity is well explained by using a Berthelot model.",
keywords = "Defects, Ge and Si oxides, Nanocrystals, Photoluminescence",
author = "Cherkova, {S. G.} and Volodin, {V. A.} and Fan Zhang and M. Stoffel and H. Rinnert and M. Vergnat",
note = "Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",
year = "2021",
month = dec,
doi = "10.1016/j.optmat.2021.111736",
language = "English",
volume = "122",
journal = "Optical Materials",
issn = "0925-3467",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature

AU - Cherkova, S. G.

AU - Volodin, V. A.

AU - Zhang, Fan

AU - Stoffel, M.

AU - Rinnert, H.

AU - Vergnat, M.

N1 - Publisher Copyright: © 2021 Elsevier B.V.

PY - 2021/12

Y1 - 2021/12

N2 - The optical properties of GeO[SiO] and GeO[SiO2] solid alloy films grown on Si(001) substrates were studied using Raman, Fourier transform infrared absorption (FTIR) and photoluminescence (PL) spectroscopies. A PL signal was observed in the infrared region both for as-deposited and annealed germanium silicate suboxide films. Furnace annealing led to an increase of the PL signal and to a redshift of the PL maximum. The PL at ∼1100 nm is most probably due to defect-induced radiative transitions while the PL at ∼1500 nm may be rather caused by amorphous Ge nanoclusters and Ge nanocrystals. Finally, the temperature dependence of the PL was studied. Anomalous quenching of the PL signal is observed which does not follow the classical Arrhenius law. The temperature dependence of the PL intensity is well explained by using a Berthelot model.

AB - The optical properties of GeO[SiO] and GeO[SiO2] solid alloy films grown on Si(001) substrates were studied using Raman, Fourier transform infrared absorption (FTIR) and photoluminescence (PL) spectroscopies. A PL signal was observed in the infrared region both for as-deposited and annealed germanium silicate suboxide films. Furnace annealing led to an increase of the PL signal and to a redshift of the PL maximum. The PL at ∼1100 nm is most probably due to defect-induced radiative transitions while the PL at ∼1500 nm may be rather caused by amorphous Ge nanoclusters and Ge nanocrystals. Finally, the temperature dependence of the PL was studied. Anomalous quenching of the PL signal is observed which does not follow the classical Arrhenius law. The temperature dependence of the PL intensity is well explained by using a Berthelot model.

KW - Defects

KW - Ge and Si oxides

KW - Nanocrystals

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=85118349118&partnerID=8YFLogxK

U2 - 10.1016/j.optmat.2021.111736

DO - 10.1016/j.optmat.2021.111736

M3 - Article

AN - SCOPUS:85118349118

VL - 122

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

M1 - 111736

ER -

ID: 34600720