TY - JOUR

T1 - Nonionic Iminosulfonate Photoacid Generators for Photolithography

T2 - Synthesis, Properties, and Application in Positive Photoresists

AU - Konorev, Viacheslav

AU - Agafontsev, Aleksandr

AU - Derevyashkin, Sergey

AU - Vasiliev, Evgenij

AU - Shelkovnikov, Vladimir

AU - Bayrash, Aleksandr

AU - Bukhtoyarova, Aleksandra

AU - Gurskaya, Larisa

AU - Shundrina, Inna

AU - Bagryanskaya, Irina

N1 - V. Konorev, A. Agafontsev, S. Derevyashkin, et al. “ Nonionic Iminosulfonate Photoacid Generators for Photolithography: Synthesis, Properties, and Application in Positive Photoresists.” ChemistrySelect 11, no. 34 (2026): e74273. https://doi.org/10.1002/slct.74273 The authors would like to acknowledge the Multi-Access ChemicalResearch Center SB RAS for spectral and analytical measurements. Theresearch was supported by the Russian Science Foundation (project no.25-23-00154).

PY - 2026/9/7

Y1 - 2026/9/7

N2 - Thiophene-containing nonionic iminosulfonate photoacid generators (PAGs) were synthesized and evaluated for application in chemically amplified positive photoresists. The compounds exhibit significant absorption in the near-UV region (405–436 nm) and sufficient thermal stability for lithographic processing. When incorporated into hydroxystyrene-based resists, they allowed fabrication of periodic microstructures via 405 nm interference lithography. Several derivatives demonstrated high photosensitivity requiring exposure doses below 1 mJ·cm−2, while the best-performing formulations yielded high-resolution microstructures with a minimum line edge roughness of 25 nm and a line width roughness of 38 nm. Overall, the results demonstrate that thiophene-based iminosulfonates combine efficient light absorption, robust thermal stability, and high pattern fidelity, making them promising nonionic PAGs for g-, h-, and i-line photolithography.

AB - Thiophene-containing nonionic iminosulfonate photoacid generators (PAGs) were synthesized and evaluated for application in chemically amplified positive photoresists. The compounds exhibit significant absorption in the near-UV region (405–436 nm) and sufficient thermal stability for lithographic processing. When incorporated into hydroxystyrene-based resists, they allowed fabrication of periodic microstructures via 405 nm interference lithography. Several derivatives demonstrated high photosensitivity requiring exposure doses below 1 mJ·cm−2, while the best-performing formulations yielded high-resolution microstructures with a minimum line edge roughness of 25 nm and a line width roughness of 38 nm. Overall, the results demonstrate that thiophene-based iminosulfonates combine efficient light absorption, robust thermal stability, and high pattern fidelity, making them promising nonionic PAGs for g-, h-, and i-line photolithography.

KW - heterocycles

KW - nanostructures

KW - photochemistry

KW - photolithography

KW - гетероциклы

KW - наноструктуры

KW - фотохимия

KW - фотолитография

UR - https://www.mendeley.com/catalogue/3db8f7d7-b2ea-398f-bc15-e7242f0d3d11/

UR - https://www.scopus.com/pages/publications/105049678887

U2 - 10.1002/slct.74273

DO - 10.1002/slct.74273

M3 - Article

VL - 11

JO - ChemistrySelect

JF - ChemistrySelect

SN - 2365-6549

IS - 34

M1 - e74273

ER -