Research output: Contribution to journal › Article › peer-review
Nonionic Iminosulfonate Photoacid Generators for Photolithography : Synthesis, Properties, and Application in Positive Photoresists. / Konorev, Viacheslav; Agafontsev, Aleksandr; Derevyashkin, Sergey et al.
In: ChemistrySelect, Vol. 11, No. 34, e74273, 07.09.2026.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Nonionic Iminosulfonate Photoacid Generators for Photolithography
T2 - Synthesis, Properties, and Application in Positive Photoresists
AU - Konorev, Viacheslav
AU - Agafontsev, Aleksandr
AU - Derevyashkin, Sergey
AU - Vasiliev, Evgenij
AU - Shelkovnikov, Vladimir
AU - Bayrash, Aleksandr
AU - Bukhtoyarova, Aleksandra
AU - Gurskaya, Larisa
AU - Shundrina, Inna
AU - Bagryanskaya, Irina
N1 - V. Konorev, A. Agafontsev, S. Derevyashkin, et al. “ Nonionic Iminosulfonate Photoacid Generators for Photolithography: Synthesis, Properties, and Application in Positive Photoresists.” ChemistrySelect 11, no. 34 (2026): e74273. https://doi.org/10.1002/slct.74273 The authors would like to acknowledge the Multi-Access ChemicalResearch Center SB RAS for spectral and analytical measurements. Theresearch was supported by the Russian Science Foundation (project no.25-23-00154).
PY - 2026/9/7
Y1 - 2026/9/7
N2 - Thiophene-containing nonionic iminosulfonate photoacid generators (PAGs) were synthesized and evaluated for application in chemically amplified positive photoresists. The compounds exhibit significant absorption in the near-UV region (405–436 nm) and sufficient thermal stability for lithographic processing. When incorporated into hydroxystyrene-based resists, they allowed fabrication of periodic microstructures via 405 nm interference lithography. Several derivatives demonstrated high photosensitivity requiring exposure doses below 1 mJ·cm−2, while the best-performing formulations yielded high-resolution microstructures with a minimum line edge roughness of 25 nm and a line width roughness of 38 nm. Overall, the results demonstrate that thiophene-based iminosulfonates combine efficient light absorption, robust thermal stability, and high pattern fidelity, making them promising nonionic PAGs for g-, h-, and i-line photolithography.
AB - Thiophene-containing nonionic iminosulfonate photoacid generators (PAGs) were synthesized and evaluated for application in chemically amplified positive photoresists. The compounds exhibit significant absorption in the near-UV region (405–436 nm) and sufficient thermal stability for lithographic processing. When incorporated into hydroxystyrene-based resists, they allowed fabrication of periodic microstructures via 405 nm interference lithography. Several derivatives demonstrated high photosensitivity requiring exposure doses below 1 mJ·cm−2, while the best-performing formulations yielded high-resolution microstructures with a minimum line edge roughness of 25 nm and a line width roughness of 38 nm. Overall, the results demonstrate that thiophene-based iminosulfonates combine efficient light absorption, robust thermal stability, and high pattern fidelity, making them promising nonionic PAGs for g-, h-, and i-line photolithography.
KW - heterocycles
KW - nanostructures
KW - photochemistry
KW - photolithography
KW - гетероциклы
KW - наноструктуры
KW - фотохимия
KW - фотолитография
UR - https://www.mendeley.com/catalogue/3db8f7d7-b2ea-398f-bc15-e7242f0d3d11/
UR - https://www.scopus.com/pages/publications/105049678887
U2 - 10.1002/slct.74273
DO - 10.1002/slct.74273
M3 - Article
VL - 11
JO - ChemistrySelect
JF - ChemistrySelect
SN - 2365-6549
IS - 34
M1 - e74273
ER -
ID: 83163216