TY - JOUR

T1 - Monte Carlo simulation of roughening at step-terraced surfaces

AU - Kazantsev, D. M.

AU - Shwartz, N. L.

AU - Alperovich, V. L.

PY - 2019/4/17

Y1 - 2019/4/17

N2 - GaAs thermal smoothing at temperatures T ≤ 650°C under conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing changes to roughening. In the present paper, thermal roughening of a step-terraced surface caused by atomic step flow around step pinning centers is studied using Monte-Carlo simulation. It is proved that the Schwöbel barrier is necessary for step bunching in the presence of step pinning centers. The lower limit of the Schwöbel barrier E S = 0.4 eV is estimated for the GaAs(001) surface.

AB - GaAs thermal smoothing at temperatures T ≤ 650°C under conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing changes to roughening. In the present paper, thermal roughening of a step-terraced surface caused by atomic step flow around step pinning centers is studied using Monte-Carlo simulation. It is proved that the Schwöbel barrier is necessary for step bunching in the presence of step pinning centers. The lower limit of the Schwöbel barrier E S = 0.4 eV is estimated for the GaAs(001) surface.

UR - http://www.scopus.com/inward/record.url?scp=85065624644&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1199/1/012010

DO - 10.1088/1742-6596/1199/1/012010

M3 - Conference article

AN - SCOPUS:85065624644

VL - 1199

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012010

T2 - 20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018

Y2 - 26 November 2018 through 30 November 2018

ER -