Standard

Monte Carlo simulation of roughening at step-terraced surfaces. / Kazantsev, D. M.; Shwartz, N. L.; Alperovich, V. L.

In: Journal of Physics: Conference Series, Vol. 1199, No. 1, 012010, 17.04.2019.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Kazantsev, DM, Shwartz, NL & Alperovich, VL 2019, 'Monte Carlo simulation of roughening at step-terraced surfaces', Journal of Physics: Conference Series, vol. 1199, no. 1, 012010. https://doi.org/10.1088/1742-6596/1199/1/012010

APA

Kazantsev, D. M., Shwartz, N. L., & Alperovich, V. L. (2019). Monte Carlo simulation of roughening at step-terraced surfaces. Journal of Physics: Conference Series, 1199(1), [012010]. https://doi.org/10.1088/1742-6596/1199/1/012010

Vancouver

Kazantsev DM, Shwartz NL, Alperovich VL. Monte Carlo simulation of roughening at step-terraced surfaces. Journal of Physics: Conference Series. 2019 Apr 17;1199(1):012010. doi: 10.1088/1742-6596/1199/1/012010

Author

Kazantsev, D. M. ; Shwartz, N. L. ; Alperovich, V. L. / Monte Carlo simulation of roughening at step-terraced surfaces. In: Journal of Physics: Conference Series. 2019 ; Vol. 1199, No. 1.

BibTeX

@article{c7403fc78d154d08b25c59f3df9d4bb5,
title = "Monte Carlo simulation of roughening at step-terraced surfaces",
abstract = " GaAs thermal smoothing at temperatures T ≤ 650°C under conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing changes to roughening. In the present paper, thermal roughening of a step-terraced surface caused by atomic step flow around step pinning centers is studied using Monte-Carlo simulation. It is proved that the Schw{\"o}bel barrier is necessary for step bunching in the presence of step pinning centers. The lower limit of the Schw{\"o}bel barrier E S = 0.4 eV is estimated for the GaAs(001) surface. ",
author = "Kazantsev, {D. M.} and Shwartz, {N. L.} and Alperovich, {V. L.}",
year = "2019",
month = apr,
day = "17",
doi = "10.1088/1742-6596/1199/1/012010",
language = "English",
volume = "1199",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",
note = "20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 ; Conference date: 26-11-2018 Through 30-11-2018",

}

RIS

TY - JOUR

T1 - Monte Carlo simulation of roughening at step-terraced surfaces

AU - Kazantsev, D. M.

AU - Shwartz, N. L.

AU - Alperovich, V. L.

PY - 2019/4/17

Y1 - 2019/4/17

N2 - GaAs thermal smoothing at temperatures T ≤ 650°C under conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing changes to roughening. In the present paper, thermal roughening of a step-terraced surface caused by atomic step flow around step pinning centers is studied using Monte-Carlo simulation. It is proved that the Schwöbel barrier is necessary for step bunching in the presence of step pinning centers. The lower limit of the Schwöbel barrier E S = 0.4 eV is estimated for the GaAs(001) surface.

AB - GaAs thermal smoothing at temperatures T ≤ 650°C under conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing changes to roughening. In the present paper, thermal roughening of a step-terraced surface caused by atomic step flow around step pinning centers is studied using Monte-Carlo simulation. It is proved that the Schwöbel barrier is necessary for step bunching in the presence of step pinning centers. The lower limit of the Schwöbel barrier E S = 0.4 eV is estimated for the GaAs(001) surface.

UR - http://www.scopus.com/inward/record.url?scp=85065624644&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1199/1/012010

DO - 10.1088/1742-6596/1199/1/012010

M3 - Conference article

AN - SCOPUS:85065624644

VL - 1199

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012010

T2 - 20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018

Y2 - 26 November 2018 through 30 November 2018

ER -

ID: 20039916