TY - JOUR

T1 - Microwave Absorption in 2D Topological Insulators with a Developed Edge States Network

AU - Mahmoodian, Mahmood M.

AU - Entin, Matvey V.

PY - 2019/6/1

Y1 - 2019/6/1

N2 - A 2D HgTe quantum well is analyzed based on the assumption that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps. The borders between ordinary and topological insulator phases form a network of the edge states covering the entire sample. The optical transitions within the edge states yield a 2D absorption. The qualitative consideration is based on the model of optical intraedge transitions in curved edge states together with percolation arguments.

AB - A 2D HgTe quantum well is analyzed based on the assumption that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps. The borders between ordinary and topological insulator phases form a network of the edge states covering the entire sample. The optical transitions within the edge states yield a 2D absorption. The qualitative consideration is based on the model of optical intraedge transitions in curved edge states together with percolation arguments.

KW - edge states

KW - microwave absorption

KW - percolation

KW - random two-dimensional topological insulators

UR - http://www.scopus.com/inward/record.url?scp=85061776881&partnerID=8YFLogxK

U2 - 10.1002/pssb.201800652

DO - 10.1002/pssb.201800652

M3 - Article

AN - SCOPUS:85061776881

VL - 256

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 6

M1 - 1800652

ER -