Standard

Microwave Absorption in 2D Topological Insulators with a Developed Edge States Network. / Mahmoodian, Mahmood M.; Entin, Matvey V.

In: Physica Status Solidi (B) Basic Research, Vol. 256, No. 6, 1800652, 01.06.2019.

Research output: Contribution to journal › Article › peer-review

Harvard

Mahmoodian, MM & Entin, MV 2019, 'Microwave Absorption in 2D Topological Insulators with a Developed Edge States Network', Physica Status Solidi (B) Basic Research, vol. 256, no. 6, 1800652. https://doi.org/10.1002/pssb.201800652

APA

Mahmoodian, M. M., & Entin, M. V. (2019). Microwave Absorption in 2D Topological Insulators with a Developed Edge States Network. Physica Status Solidi (B) Basic Research, 256(6), [1800652]. https://doi.org/10.1002/pssb.201800652

Vancouver

Mahmoodian MM, Entin MV. Microwave Absorption in 2D Topological Insulators with a Developed Edge States Network. Physica Status Solidi (B) Basic Research. 2019 Jun 1;256(6):1800652. doi: 10.1002/pssb.201800652

Author

Mahmoodian, Mahmood M. ; Entin, Matvey V. / Microwave Absorption in 2D Topological Insulators with a Developed Edge States Network. In: Physica Status Solidi (B) Basic Research. 2019 ; Vol. 256, No. 6.

BibTeX

@article{75f9f2176def43d5afd516aa02462aa9,
title = "Microwave Absorption in 2D Topological Insulators with a Developed Edge States Network",
abstract = "A 2D HgTe quantum well is analyzed based on the assumption that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps. The borders between ordinary and topological insulator phases form a network of the edge states covering the entire sample. The optical transitions within the edge states yield a 2D absorption. The qualitative consideration is based on the model of optical intraedge transitions in curved edge states together with percolation arguments.",
keywords = "edge states, microwave absorption, percolation, random two-dimensional topological insulators",
author = "Mahmoodian, {Mahmood M.} and Entin, {Matvey V.}",
year = "2019",
month = jun,
day = "1",
doi = "10.1002/pssb.201800652",
language = "English",
volume = "256",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "6",

}

RIS

TY - JOUR

T1 - Microwave Absorption in 2D Topological Insulators with a Developed Edge States Network

AU - Mahmoodian, Mahmood M.

AU - Entin, Matvey V.

PY - 2019/6/1

Y1 - 2019/6/1

N2 - A 2D HgTe quantum well is analyzed based on the assumption that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps. The borders between ordinary and topological insulator phases form a network of the edge states covering the entire sample. The optical transitions within the edge states yield a 2D absorption. The qualitative consideration is based on the model of optical intraedge transitions in curved edge states together with percolation arguments.

AB - A 2D HgTe quantum well is analyzed based on the assumption that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps. The borders between ordinary and topological insulator phases form a network of the edge states covering the entire sample. The optical transitions within the edge states yield a 2D absorption. The qualitative consideration is based on the model of optical intraedge transitions in curved edge states together with percolation arguments.

KW - edge states

KW - microwave absorption

KW - percolation

KW - random two-dimensional topological insulators

UR - http://www.scopus.com/inward/record.url?scp=85061776881&partnerID=8YFLogxK

U2 - 10.1002/pssb.201800652

DO - 10.1002/pssb.201800652

M3 - Article

AN - SCOPUS:85061776881

VL - 256

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 6

M1 - 1800652

ER -

ID: 18626598