TY - JOUR

T1 - MBE-grown MCT hetero- A nd nanostructures for IR and THz detectors

AU - Dvoretsky, S. A.

AU - Mikhailov, N. N.

AU - Remesnik, V. G.

AU - Sidorov, Yu G.

AU - Shvets, V. A.

AU - Ikusov, D. G.

AU - Varavin, V. S.

AU - Yakushev, M. V.

AU - Gumenjuk-Sichevska, J. V.

AU - Golenkov, A. G.

AU - Lysiuk, I. O.

AU - Tsybrii, Z. F.

AU - Shevchik-Shekera, A. V.

AU - Sizov, F. F.

AU - Latyshev, A. V.

AU - Aseev, A. L.

PY - 2019/9/1

Y1 - 2019/9/1

N2 - We present an overview of our technological achievements in the implementation of detector structures based on mercury cadmium telluride (MCT) heterostructures and nanostructures for IR and THz spectral ranges. We use a special MBE design set for the epitaxial layer growth on (013) GaAs substrates with ZnTe and CdTe buffer layers up to 3" in diameter with the precise ellipsometric monitoring in situ. The growth of MCT alloy heterostructures with the optimal composition distribution throughout the thickness allows the realization of different types of many-layered heterostructures and quantum wells to prepare the material for fabricating single-or dual-band IR and THz detectors. We also present the two-color broad-band bolometric detectors based on the epitaxial MCT layers that are sensitive in 150-300-GHz subterahertz and infrared ranges from 3 to 10â»μm, which operate at the ambient or liquid nitrogen temperatures as photoconductors, as well as the detectors based on planar HgTe quantum wells. The design and dimensions of THz detector antennas are optimized for reasonable detector sensitivity values. A special diffraction limited optical system for the detector testing was designed and manufactured. We represent here the THz images of objects hidden behind a plasterboard or foam plastic packaging, obtained at the radiation frequencies of 70, 140, and 275â»GHz, respectively.

AB - We present an overview of our technological achievements in the implementation of detector structures based on mercury cadmium telluride (MCT) heterostructures and nanostructures for IR and THz spectral ranges. We use a special MBE design set for the epitaxial layer growth on (013) GaAs substrates with ZnTe and CdTe buffer layers up to 3" in diameter with the precise ellipsometric monitoring in situ. The growth of MCT alloy heterostructures with the optimal composition distribution throughout the thickness allows the realization of different types of many-layered heterostructures and quantum wells to prepare the material for fabricating single-or dual-band IR and THz detectors. We also present the two-color broad-band bolometric detectors based on the epitaxial MCT layers that are sensitive in 150-300-GHz subterahertz and infrared ranges from 3 to 10â»μm, which operate at the ambient or liquid nitrogen temperatures as photoconductors, as well as the detectors based on planar HgTe quantum wells. The design and dimensions of THz detector antennas are optimized for reasonable detector sensitivity values. A special diffraction limited optical system for the detector testing was designed and manufactured. We represent here the THz images of objects hidden behind a plasterboard or foam plastic packaging, obtained at the radiation frequencies of 70, 140, and 275â»GHz, respectively.

KW - Detector

KW - Growth

KW - HgCdTe

KW - Infrared

KW - Molecular-beam epitaxy

KW - Terahertz

KW - HGTE

KW - INFRARED DETECTORS

KW - FILMS

KW - MOLECULAR-BEAM EPITAXY

KW - ELLIPSOMETRY

UR - http://www.scopus.com/inward/record.url?scp=85072516774&partnerID=8YFLogxK

U2 - 10.1016/j.opelre.2019.07.002

DO - 10.1016/j.opelre.2019.07.002

M3 - Article

AN - SCOPUS:85072516774

VL - 27

SP - 282

EP - 290

JO - Opto-electronics Review

JF - Opto-electronics Review

SN - 1230-3402

IS - 3

ER -