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MBE-grown InSb photodetector arrays. / Bakarov, A. K.; Gutakovskii, A. K.; Zhuravlev, K. S. и др.

в: Technical Physics, Том 62, № 6, 01.06.2017, стр. 915-919.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Bakarov, AK, Gutakovskii, AK, Zhuravlev, KS, Kovchavtsev, AP, Toropov, AI, Burlakov, ID, Boltar’, KO, Vlasov, PV & Lopukhin, AA 2017, 'MBE-grown InSb photodetector arrays', Technical Physics, Том. 62, № 6, стр. 915-919. https://doi.org/10.1134/S1063784217060044

APA

Bakarov, A. K., Gutakovskii, A. K., Zhuravlev, K. S., Kovchavtsev, A. P., Toropov, A. I., Burlakov, I. D., Boltar’, K. O., Vlasov, P. V., & Lopukhin, A. A. (2017). MBE-grown InSb photodetector arrays. Technical Physics, 62(6), 915-919. https://doi.org/10.1134/S1063784217060044

Vancouver

Bakarov AK, Gutakovskii AK, Zhuravlev KS, Kovchavtsev AP, Toropov AI, Burlakov ID и др. MBE-grown InSb photodetector arrays. Technical Physics. 2017 июнь 1;62(6):915-919. doi: 10.1134/S1063784217060044

Author

Bakarov, A. K. ; Gutakovskii, A. K. ; Zhuravlev, K. S. и др. / MBE-grown InSb photodetector arrays. в: Technical Physics. 2017 ; Том 62, № 6. стр. 915-919.

BibTeX

@article{0e8dc1e5bbdc43c78370a4e0c326b2a2,
title = "MBE-grown InSb photodetector arrays",
abstract = "The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.",
author = "Bakarov, {A. K.} and Gutakovskii, {A. K.} and Zhuravlev, {K. S.} and Kovchavtsev, {A. P.} and Toropov, {A. I.} and Burlakov, {I. D.} and Boltar{\textquoteright}, {K. O.} and Vlasov, {P. V.} and Lopukhin, {A. A.}",
year = "2017",
month = jun,
day = "1",
doi = "10.1134/S1063784217060044",
language = "English",
volume = "62",
pages = "915--919",
journal = "Technical Physics",
issn = "1063-7842",
publisher = "PLEIADES PUBLISHING INC",
number = "6",

}

RIS

TY - JOUR

T1 - MBE-grown InSb photodetector arrays

AU - Bakarov, A. K.

AU - Gutakovskii, A. K.

AU - Zhuravlev, K. S.

AU - Kovchavtsev, A. P.

AU - Toropov, A. I.

AU - Burlakov, I. D.

AU - Boltar’, K. O.

AU - Vlasov, P. V.

AU - Lopukhin, A. A.

PY - 2017/6/1

Y1 - 2017/6/1

N2 - The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.

AB - The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.

UR - http://www.scopus.com/inward/record.url?scp=85021254965&partnerID=8YFLogxK

U2 - 10.1134/S1063784217060044

DO - 10.1134/S1063784217060044

M3 - Article

AN - SCOPUS:85021254965

VL - 62

SP - 915

EP - 919

JO - Technical Physics

JF - Technical Physics

SN - 1063-7842

IS - 6

ER -

ID: 9561828