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MBE-grown InSb photodetector arrays. / Bakarov, A. K.; Gutakovskii, A. K.; Zhuravlev, K. S. et al.
In:
Technical Physics, Vol. 62, No. 6, 01.06.2017, p. 915-919.
Research output: Contribution to journal › Article › peer-review
Harvard
Bakarov, AK, Gutakovskii, AK, Zhuravlev, KS, Kovchavtsev, AP, Toropov, AI, Burlakov, ID, Boltar’, KO, Vlasov, PV & Lopukhin, AA 2017, '
MBE-grown InSb photodetector arrays',
Technical Physics, vol. 62, no. 6, pp. 915-919.
https://doi.org/10.1134/S1063784217060044APA
Bakarov, A. K., Gutakovskii, A. K., Zhuravlev, K. S., Kovchavtsev, A. P., Toropov, A. I., Burlakov, I. D., Boltar’, K. O., Vlasov, P. V., & Lopukhin, A. A. (2017).
MBE-grown InSb photodetector arrays.
Technical Physics,
62(6), 915-919.
https://doi.org/10.1134/S1063784217060044Vancouver
Bakarov AK, Gutakovskii AK, Zhuravlev KS, Kovchavtsev AP, Toropov AI, Burlakov ID et al.
MBE-grown InSb photodetector arrays.
Technical Physics. 2017 Jun 1;62(6):915-919. doi: 10.1134/S1063784217060044
Author
BibTeX
@article{0e8dc1e5bbdc43c78370a4e0c326b2a2,
title = "MBE-grown InSb photodetector arrays",
abstract = "The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.",
author = "Bakarov, {A. K.} and Gutakovskii, {A. K.} and Zhuravlev, {K. S.} and Kovchavtsev, {A. P.} and Toropov, {A. I.} and Burlakov, {I. D.} and Boltar{\textquoteright}, {K. O.} and Vlasov, {P. V.} and Lopukhin, {A. A.}",
year = "2017",
month = jun,
day = "1",
doi = "10.1134/S1063784217060044",
language = "English",
volume = "62",
pages = "915--919",
journal = "Technical Physics",
issn = "1063-7842",
publisher = "PLEIADES PUBLISHING INC",
number = "6",
}
RIS
TY - JOUR
T1 - MBE-grown InSb photodetector arrays
AU - Bakarov, A. K.
AU - Gutakovskii, A. K.
AU - Zhuravlev, K. S.
AU - Kovchavtsev, A. P.
AU - Toropov, A. I.
AU - Burlakov, I. D.
AU - Boltar’, K. O.
AU - Vlasov, P. V.
AU - Lopukhin, A. A.
PY - 2017/6/1
Y1 - 2017/6/1
N2 - The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.
AB - The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.
UR - http://www.scopus.com/inward/record.url?scp=85021254965&partnerID=8YFLogxK
U2 - 10.1134/S1063784217060044
DO - 10.1134/S1063784217060044
M3 - Article
AN - SCOPUS:85021254965
VL - 62
SP - 915
EP - 919
JO - Technical Physics
JF - Technical Physics
SN - 1063-7842
IS - 6
ER -
