Standard

Layer exchange during aluminum-induced crystallization of silicon suboxide thin films. / Zamchiy, A. O.; Baranov, E. A.; Merkulova, I. E. и др.

в: Materials Letters, Том 293, 129723, 15.06.2021.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Zamchiy, AO, Baranov, EA, Merkulova, IE, Korolkov, IV, Vdovin, VI, Gutakovskii, AK & Volodin, VA 2021, 'Layer exchange during aluminum-induced crystallization of silicon suboxide thin films', Materials Letters, Том. 293, 129723. https://doi.org/10.1016/j.matlet.2021.129723

APA

Zamchiy, A. O., Baranov, E. A., Merkulova, I. E., Korolkov, I. V., Vdovin, V. I., Gutakovskii, A. K., & Volodin, V. A. (2021). Layer exchange during aluminum-induced crystallization of silicon suboxide thin films. Materials Letters, 293, [129723]. https://doi.org/10.1016/j.matlet.2021.129723

Vancouver

Zamchiy AO, Baranov EA, Merkulova IE, Korolkov IV, Vdovin VI, Gutakovskii AK и др. Layer exchange during aluminum-induced crystallization of silicon suboxide thin films. Materials Letters. 2021 июнь 15;293:129723. doi: 10.1016/j.matlet.2021.129723

Author

Zamchiy, A. O. ; Baranov, E. A. ; Merkulova, I. E. и др. / Layer exchange during aluminum-induced crystallization of silicon suboxide thin films. в: Materials Letters. 2021 ; Том 293.

BibTeX

@article{e03496cb8e104e1297ff9359e144d8e1,
title = "Layer exchange during aluminum-induced crystallization of silicon suboxide thin films",
abstract = "Aluminum-induced crystallization of a-SiO1.8 in the layer exchange mode was carried out. Annealing of a “SiO2 substrate/Al/a-SiO2 membrane/a-SiO1.8” stacked structure at 550 °C led to the formation of a continuous polycrystalline Si (poly-Si) thin film on the substrate, which is characteristic of the layer exchange process. However, the upper layer formed in the process had structural features that were not previously observed for the pure and slightly oxidized amorphous silicon as a Si-containing thin-film precursor. The high oxygen content in the system led to the non-uniform transformation of a-SiO1.8 layer, namely, to the formation of Al oxide islands of submicron size nearby the interface with poly-Si thin film as a result of the complete oxidation of the Al layer, whereas the other part of the upper layer was still unchanged. In addition, the embedding of Al into the SiO2 substrate accompanied by its oxidation was observed.",
keywords = "Aluminum-induced crystallization, Aluminum-induced layer exchange, Phase transformation, Polycrystalline silicon, Silicon suboxide, Thin films",
author = "Zamchiy, {A. O.} and Baranov, {E. A.} and Merkulova, {I. E.} and Korolkov, {I. V.} and Vdovin, {V. I.} and Gutakovskii, {A. K.} and Volodin, {V. A.}",
note = "Funding Information: This study was financially supported by the Russian Science Foundation, project # 19-79-10143. TEM studies were performed using the equipment of CCU {\textquoteleft}{\textquoteleft}Nanostructures”. Publisher Copyright: {\textcopyright} 2021 Elsevier B.V. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = jun,
day = "15",
doi = "10.1016/j.matlet.2021.129723",
language = "English",
volume = "293",
journal = "Materials Letters",
issn = "0167-577X",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Layer exchange during aluminum-induced crystallization of silicon suboxide thin films

AU - Zamchiy, A. O.

AU - Baranov, E. A.

AU - Merkulova, I. E.

AU - Korolkov, I. V.

AU - Vdovin, V. I.

AU - Gutakovskii, A. K.

AU - Volodin, V. A.

N1 - Funding Information: This study was financially supported by the Russian Science Foundation, project # 19-79-10143. TEM studies were performed using the equipment of CCU ‘‘Nanostructures”. Publisher Copyright: © 2021 Elsevier B.V. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/6/15

Y1 - 2021/6/15

N2 - Aluminum-induced crystallization of a-SiO1.8 in the layer exchange mode was carried out. Annealing of a “SiO2 substrate/Al/a-SiO2 membrane/a-SiO1.8” stacked structure at 550 °C led to the formation of a continuous polycrystalline Si (poly-Si) thin film on the substrate, which is characteristic of the layer exchange process. However, the upper layer formed in the process had structural features that were not previously observed for the pure and slightly oxidized amorphous silicon as a Si-containing thin-film precursor. The high oxygen content in the system led to the non-uniform transformation of a-SiO1.8 layer, namely, to the formation of Al oxide islands of submicron size nearby the interface with poly-Si thin film as a result of the complete oxidation of the Al layer, whereas the other part of the upper layer was still unchanged. In addition, the embedding of Al into the SiO2 substrate accompanied by its oxidation was observed.

AB - Aluminum-induced crystallization of a-SiO1.8 in the layer exchange mode was carried out. Annealing of a “SiO2 substrate/Al/a-SiO2 membrane/a-SiO1.8” stacked structure at 550 °C led to the formation of a continuous polycrystalline Si (poly-Si) thin film on the substrate, which is characteristic of the layer exchange process. However, the upper layer formed in the process had structural features that were not previously observed for the pure and slightly oxidized amorphous silicon as a Si-containing thin-film precursor. The high oxygen content in the system led to the non-uniform transformation of a-SiO1.8 layer, namely, to the formation of Al oxide islands of submicron size nearby the interface with poly-Si thin film as a result of the complete oxidation of the Al layer, whereas the other part of the upper layer was still unchanged. In addition, the embedding of Al into the SiO2 substrate accompanied by its oxidation was observed.

KW - Aluminum-induced crystallization

KW - Aluminum-induced layer exchange

KW - Phase transformation

KW - Polycrystalline silicon

KW - Silicon suboxide

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=85103129731&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2021.129723

DO - 10.1016/j.matlet.2021.129723

M3 - Article

AN - SCOPUS:85103129731

VL - 293

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

M1 - 129723

ER -

ID: 28204037