Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Kinetics of gold-induced layer exchange crystallization of amorphous silicon suboxide films: Experimental and theoretical study. / Zamchiy, A. O.; Vorobyov, Y. V.; Lunev, N. A. и др.
в: Journal of Alloys and Compounds, Том 939, 168818, 05.04.2023.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Kinetics of gold-induced layer exchange crystallization of amorphous silicon suboxide films: Experimental and theoretical study
AU - Zamchiy, A. O.
AU - Vorobyov, Y. V.
AU - Lunev, N. A.
AU - Konstantinov, V. O.
AU - Sakhapov, S. Z.
AU - Maximovskiy, E. A.
AU - Baranov, E. A.
N1 - This study was financially supported by the Russian Science Foundation , project # 22-79-10079 , ( https://rscf.ru/project/22-79-10079/ ). The simulation of crystallization process was funded by the Council on grants of the President of the Russian Federation (no. MK-1155.2021.1.3 ). The study of the optical properties of films was carried out under state contract with IT SB RAS , project No. 121031800218–5 .
PY - 2023/4/5
Y1 - 2023/4/5
N2 - The kinetics of gold-induced crystallization (AuIC) of amorphous silicon suboxide (a-SiOx, x = 0.2) films in the layer exchange mode was detailed studied by variation of the annealing temperature in the range of 220–250 °C for the first time. In situ optical microscopy performed during annealing made it possible to study the processes of the nucleation and the growth of Si crystal structures. A decrease in the nucleation rate during annealing was shown, which is probably associated with coarsening of grains in the Au film which is confirmed by scanning electron microscopy. Obtained experimental data along with the simulations carried out within the framework of the Kolmogorov–Johnson–Mehl–Avrami (KJMA) theory made it possible for the first time to obtain the values of the activation energies for the nucleation, the growth, as well as the overall process of AuIC of a-SiO0.2 which amounted to 2.51 ± 0.80, 0.31 ± 0.10, and 1.62 ± 0.15 eV, respectively.
AB - The kinetics of gold-induced crystallization (AuIC) of amorphous silicon suboxide (a-SiOx, x = 0.2) films in the layer exchange mode was detailed studied by variation of the annealing temperature in the range of 220–250 °C for the first time. In situ optical microscopy performed during annealing made it possible to study the processes of the nucleation and the growth of Si crystal structures. A decrease in the nucleation rate during annealing was shown, which is probably associated with coarsening of grains in the Au film which is confirmed by scanning electron microscopy. Obtained experimental data along with the simulations carried out within the framework of the Kolmogorov–Johnson–Mehl–Avrami (KJMA) theory made it possible for the first time to obtain the values of the activation energies for the nucleation, the growth, as well as the overall process of AuIC of a-SiO0.2 which amounted to 2.51 ± 0.80, 0.31 ± 0.10, and 1.62 ± 0.15 eV, respectively.
KW - Activation energy
KW - Gold-induced crystallization
KW - KJMA model
KW - Kinetic parameters
KW - Polycrystalline silicon
KW - Silicon suboxide
UR - https://www.scopus.com/inward/record.url?eid=2-s2.0-85146177825&partnerID=40&md5=c39b9fbe6e3971f76690f928ed872a02
UR - https://www.mendeley.com/catalogue/27dd254f-5d53-3174-8c40-151a67351c29/
U2 - 10.1016/j.jallcom.2023.168818
DO - 10.1016/j.jallcom.2023.168818
M3 - Article
VL - 939
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
SN - 0925-8388
M1 - 168818
ER -
ID: 49133656