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In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides. / Ponomarev, Sergei A.; Rogilo, Dmitry I.; Zakhozhev, Konstantin E. и др.

в: Modern Electronic Materials, Том 10, № 4, 2024, стр. 251-261.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Ponomarev, SA, Rogilo, DI, Zakhozhev, KE, Nasimov, DA, Kurus, NN, Gutakovskii, AK, Kokh, KA, Milekhin, AG, Sheglov, DV & Latyshev, AV 2024, 'In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides', Modern Electronic Materials, Том. 10, № 4, стр. 251-261. https://doi.org/10.3897/j.moem.10.4.144317

APA

Ponomarev, S. A., Rogilo, D. I., Zakhozhev, K. E., Nasimov, D. A., Kurus, N. N., Gutakovskii, A. K., Kokh, K. A., Milekhin, A. G., Sheglov, D. V., & Latyshev, A. V. (2024). In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides. Modern Electronic Materials, 10(4), 251-261. https://doi.org/10.3897/j.moem.10.4.144317

Vancouver

Ponomarev SA, Rogilo DI, Zakhozhev KE, Nasimov DA, Kurus NN, Gutakovskii AK и др. In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides. Modern Electronic Materials. 2024;10(4):251-261. doi: 10.3897/j.moem.10.4.144317

Author

Ponomarev, Sergei A. ; Rogilo, Dmitry I. ; Zakhozhev, Konstantin E. и др. / In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides. в: Modern Electronic Materials. 2024 ; Том 10, № 4. стр. 251-261.

BibTeX

@article{1b24c14a5b2e4372bd31a3bcc8906574,
title = "In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides",
abstract = "Using in situ reflection electron microscopy we have presented latest studies of Si(111) and Bi 2 Se 3 (0001) surface processes during sublimation, homo- and heteroepitaxial growth of layered metal chalcogenides. A structural kinetic diagram of interaction between a selenium molecular beam and Si(111) surface has been demonstrated. We have shown congruent sublimation caused by annealing of Bi 2 Se 3 (0001) substrates in a selenium flux, visualized and described layer by layer homoepitaxial Bi 2 Se 3 growth. We have presented techniques of layered SnSe 2 and In 2 Se 3 growth on Si(111) and Bi 2 Se 3 (0001) surfaces and shown that heteroepitaxial growth starts with the 2D islands formation. The nucleation and growth of an impurity-induced phase in the form of 0.4 nm high 2D islands during high-temperature submonolayer indium deposition on Bi 2 Se 3 (0001) under exposure to Se molecular beam has been demonstrated.",
keywords = "in situ reflection electron, metal chalcogenides, microscopy, surface",
author = "Ponomarev, {Sergei A.} and Rogilo, {Dmitry I.} and Zakhozhev, {Konstantin E.} and Nasimov, {Dmitry A.} and Kurus, {Nina N.} and Gutakovskii, {Anton K.} and Kokh, {Konstantin A.} and Milekhin, {Alexander G.} and Sheglov, {Dmitry V.} and Latyshev, {Alexander V.}",
note = " SnSe2 growth on Si(111) surface was carried out with support from State Assignment (Project No. FWGW-2022-0007). Indium adsorption and SnSe2 growth on Bi2Se3(0001) surface were conducted with support from the Russian Science Foundation (Grant No. 22-72-10124). Studies of selenium beam interaction with Si(111) surface were carried out with support from the Russian Science Foundation (Grant No. 18-72-10063). Sublimation and Bi2Se3 growth were conducted with support from the Russian Science Foundation (Grant No. 19-72-30023). In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides / S. A. Ponomarev, D. I. Rogilo, K. E. Zakhozhev [et al.] // Modern Electronic Materials. – 2024. – Vol. 10, No. 4. – P. 251-261. – DOI 10.3897/j.moem.10.4.144317.",
year = "2024",
doi = "10.3897/j.moem.10.4.144317",
language = "English",
volume = "10",
pages = "251--261",
journal = "Modern Electronic Materials",
issn = "2452-2449",
publisher = "Pensoft Publishers",
number = "4",

}

RIS

TY - JOUR

T1 - In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides

AU - Ponomarev, Sergei A.

AU - Rogilo, Dmitry I.

AU - Zakhozhev, Konstantin E.

AU - Nasimov, Dmitry A.

AU - Kurus, Nina N.

AU - Gutakovskii, Anton K.

AU - Kokh, Konstantin A.

AU - Milekhin, Alexander G.

AU - Sheglov, Dmitry V.

AU - Latyshev, Alexander V.

N1 - SnSe2 growth on Si(111) surface was carried out with support from State Assignment (Project No. FWGW-2022-0007). Indium adsorption and SnSe2 growth on Bi2Se3(0001) surface were conducted with support from the Russian Science Foundation (Grant No. 22-72-10124). Studies of selenium beam interaction with Si(111) surface were carried out with support from the Russian Science Foundation (Grant No. 18-72-10063). Sublimation and Bi2Se3 growth were conducted with support from the Russian Science Foundation (Grant No. 19-72-30023). In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides / S. A. Ponomarev, D. I. Rogilo, K. E. Zakhozhev [et al.] // Modern Electronic Materials. – 2024. – Vol. 10, No. 4. – P. 251-261. – DOI 10.3897/j.moem.10.4.144317.

PY - 2024

Y1 - 2024

N2 - Using in situ reflection electron microscopy we have presented latest studies of Si(111) and Bi 2 Se 3 (0001) surface processes during sublimation, homo- and heteroepitaxial growth of layered metal chalcogenides. A structural kinetic diagram of interaction between a selenium molecular beam and Si(111) surface has been demonstrated. We have shown congruent sublimation caused by annealing of Bi 2 Se 3 (0001) substrates in a selenium flux, visualized and described layer by layer homoepitaxial Bi 2 Se 3 growth. We have presented techniques of layered SnSe 2 and In 2 Se 3 growth on Si(111) and Bi 2 Se 3 (0001) surfaces and shown that heteroepitaxial growth starts with the 2D islands formation. The nucleation and growth of an impurity-induced phase in the form of 0.4 nm high 2D islands during high-temperature submonolayer indium deposition on Bi 2 Se 3 (0001) under exposure to Se molecular beam has been demonstrated.

AB - Using in situ reflection electron microscopy we have presented latest studies of Si(111) and Bi 2 Se 3 (0001) surface processes during sublimation, homo- and heteroepitaxial growth of layered metal chalcogenides. A structural kinetic diagram of interaction between a selenium molecular beam and Si(111) surface has been demonstrated. We have shown congruent sublimation caused by annealing of Bi 2 Se 3 (0001) substrates in a selenium flux, visualized and described layer by layer homoepitaxial Bi 2 Se 3 growth. We have presented techniques of layered SnSe 2 and In 2 Se 3 growth on Si(111) and Bi 2 Se 3 (0001) surfaces and shown that heteroepitaxial growth starts with the 2D islands formation. The nucleation and growth of an impurity-induced phase in the form of 0.4 nm high 2D islands during high-temperature submonolayer indium deposition on Bi 2 Se 3 (0001) under exposure to Se molecular beam has been demonstrated.

KW - in situ reflection electron

KW - metal chalcogenides

KW - microscopy

KW - surface

UR - https://moem.pensoft.net/article/144317/

UR - https://www.mendeley.com/catalogue/fdfb78b6-c60e-311d-b8da-669c866e7323/

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85218491200&origin=inward&txGid=1c25906471859e4ccdcdc5b83dd9f122

UR - https://elibrary.ru/item.asp?id=80310093

U2 - 10.3897/j.moem.10.4.144317

DO - 10.3897/j.moem.10.4.144317

M3 - Article

VL - 10

SP - 251

EP - 261

JO - Modern Electronic Materials

JF - Modern Electronic Materials

SN - 2452-2449

IS - 4

ER -

ID: 64903984