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In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides. / Ponomarev, Sergei A.; Rogilo, Dmitry I.; Zakhozhev, Konstantin E. et al.

In: Modern Electronic Materials, Vol. 10, No. 4, 2024, p. 251-261.

Research output: Contribution to journal › Article › peer-review

Harvard

Ponomarev, SA, Rogilo, DI, Zakhozhev, KE, Nasimov, DA, Kurus, NN, Gutakovskii, AK, Kokh, KA, Milekhin, AG, Sheglov, DV & Latyshev, AV 2024, 'In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides', Modern Electronic Materials, vol. 10, no. 4, pp. 251-261. https://doi.org/10.3897/j.moem.10.4.144317

APA

Ponomarev, S. A., Rogilo, D. I., Zakhozhev, K. E., Nasimov, D. A., Kurus, N. N., Gutakovskii, A. K., Kokh, K. A., Milekhin, A. G., Sheglov, D. V., & Latyshev, A. V. (2024). In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides. Modern Electronic Materials, 10(4), 251-261. https://doi.org/10.3897/j.moem.10.4.144317

Vancouver

Ponomarev SA, Rogilo DI, Zakhozhev KE, Nasimov DA, Kurus NN, Gutakovskii AK et al. In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides. Modern Electronic Materials. 2024;10(4):251-261. doi: 10.3897/j.moem.10.4.144317

Author

Ponomarev, Sergei A. ; Rogilo, Dmitry I. ; Zakhozhev, Konstantin E. et al. / In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides. In: Modern Electronic Materials. 2024 ; Vol. 10, No. 4. pp. 251-261.

BibTeX

@article{1b24c14a5b2e4372bd31a3bcc8906574,
title = "In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides",
abstract = "Using in situ reflection electron microscopy we have presented latest studies of Si(111) and Bi 2 Se 3 (0001) surface processes during sublimation, homo- and heteroepitaxial growth of layered metal chalcogenides. A structural kinetic diagram of interaction between a selenium molecular beam and Si(111) surface has been demonstrated. We have shown congruent sublimation caused by annealing of Bi 2 Se 3 (0001) substrates in a selenium flux, visualized and described layer by layer homoepitaxial Bi 2 Se 3 growth. We have presented techniques of layered SnSe 2 and In 2 Se 3 growth on Si(111) and Bi 2 Se 3 (0001) surfaces and shown that heteroepitaxial growth starts with the 2D islands formation. The nucleation and growth of an impurity-induced phase in the form of 0.4 nm high 2D islands during high-temperature submonolayer indium deposition on Bi 2 Se 3 (0001) under exposure to Se molecular beam has been demonstrated.",
keywords = "in situ reflection electron, metal chalcogenides, microscopy, surface",
author = "Ponomarev, {Sergei A.} and Rogilo, {Dmitry I.} and Zakhozhev, {Konstantin E.} and Nasimov, {Dmitry A.} and Kurus, {Nina N.} and Gutakovskii, {Anton K.} and Kokh, {Konstantin A.} and Milekhin, {Alexander G.} and Sheglov, {Dmitry V.} and Latyshev, {Alexander V.}",
note = " SnSe2 growth on Si(111) surface was carried out with support from State Assignment (Project No. FWGW-2022-0007). Indium adsorption and SnSe2 growth on Bi2Se3(0001) surface were conducted with support from the Russian Science Foundation (Grant No. 22-72-10124). Studies of selenium beam interaction with Si(111) surface were carried out with support from the Russian Science Foundation (Grant No. 18-72-10063). Sublimation and Bi2Se3 growth were conducted with support from the Russian Science Foundation (Grant No. 19-72-30023). In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides / S. A. Ponomarev, D. I. Rogilo, K. E. Zakhozhev [et al.] // Modern Electronic Materials. – 2024. – Vol. 10, No. 4. – P. 251-261. – DOI 10.3897/j.moem.10.4.144317.",
year = "2024",
doi = "10.3897/j.moem.10.4.144317",
language = "English",
volume = "10",
pages = "251--261",
journal = "Modern Electronic Materials",
issn = "2452-2449",
publisher = "Pensoft Publishers",
number = "4",

}

RIS

TY - JOUR

T1 - In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides

AU - Ponomarev, Sergei A.

AU - Rogilo, Dmitry I.

AU - Zakhozhev, Konstantin E.

AU - Nasimov, Dmitry A.

AU - Kurus, Nina N.

AU - Gutakovskii, Anton K.

AU - Kokh, Konstantin A.

AU - Milekhin, Alexander G.

AU - Sheglov, Dmitry V.

AU - Latyshev, Alexander V.

N1 - SnSe2 growth on Si(111) surface was carried out with support from State Assignment (Project No. FWGW-2022-0007). Indium adsorption and SnSe2 growth on Bi2Se3(0001) surface were conducted with support from the Russian Science Foundation (Grant No. 22-72-10124). Studies of selenium beam interaction with Si(111) surface were carried out with support from the Russian Science Foundation (Grant No. 18-72-10063). Sublimation and Bi2Se3 growth were conducted with support from the Russian Science Foundation (Grant No. 19-72-30023). In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides / S. A. Ponomarev, D. I. Rogilo, K. E. Zakhozhev [et al.] // Modern Electronic Materials. – 2024. – Vol. 10, No. 4. – P. 251-261. – DOI 10.3897/j.moem.10.4.144317.

PY - 2024

Y1 - 2024

N2 - Using in situ reflection electron microscopy we have presented latest studies of Si(111) and Bi 2 Se 3 (0001) surface processes during sublimation, homo- and heteroepitaxial growth of layered metal chalcogenides. A structural kinetic diagram of interaction between a selenium molecular beam and Si(111) surface has been demonstrated. We have shown congruent sublimation caused by annealing of Bi 2 Se 3 (0001) substrates in a selenium flux, visualized and described layer by layer homoepitaxial Bi 2 Se 3 growth. We have presented techniques of layered SnSe 2 and In 2 Se 3 growth on Si(111) and Bi 2 Se 3 (0001) surfaces and shown that heteroepitaxial growth starts with the 2D islands formation. The nucleation and growth of an impurity-induced phase in the form of 0.4 nm high 2D islands during high-temperature submonolayer indium deposition on Bi 2 Se 3 (0001) under exposure to Se molecular beam has been demonstrated.

AB - Using in situ reflection electron microscopy we have presented latest studies of Si(111) and Bi 2 Se 3 (0001) surface processes during sublimation, homo- and heteroepitaxial growth of layered metal chalcogenides. A structural kinetic diagram of interaction between a selenium molecular beam and Si(111) surface has been demonstrated. We have shown congruent sublimation caused by annealing of Bi 2 Se 3 (0001) substrates in a selenium flux, visualized and described layer by layer homoepitaxial Bi 2 Se 3 growth. We have presented techniques of layered SnSe 2 and In 2 Se 3 growth on Si(111) and Bi 2 Se 3 (0001) surfaces and shown that heteroepitaxial growth starts with the 2D islands formation. The nucleation and growth of an impurity-induced phase in the form of 0.4 nm high 2D islands during high-temperature submonolayer indium deposition on Bi 2 Se 3 (0001) under exposure to Se molecular beam has been demonstrated.

KW - in situ reflection electron

KW - metal chalcogenides

KW - microscopy

KW - surface

UR - https://moem.pensoft.net/article/144317/

UR - https://www.mendeley.com/catalogue/fdfb78b6-c60e-311d-b8da-669c866e7323/

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85218491200&origin=inward&txGid=1c25906471859e4ccdcdc5b83dd9f122

UR - https://elibrary.ru/item.asp?id=80310093

U2 - 10.3897/j.moem.10.4.144317

DO - 10.3897/j.moem.10.4.144317

M3 - Article

VL - 10

SP - 251

EP - 261

JO - Modern Electronic Materials

JF - Modern Electronic Materials

SN - 2452-2449

IS - 4

ER -

ID: 64903984