In situ Ellipsometric Control of Growth Processes of ZnTe and CdTe Buffer Layers in Technology of Molecular Beam Epitaxy of Mercury Cadmium Telluride

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In situ Ellipsometric Control of Growth Processes of ZnTe and CdTe Buffer Layers in Technology of Molecular Beam Epitaxy of Mercury Cadmium Telluride. / Shvets, V. A.; Marin, D. V.; Yakushev, M. V. и др.

в: Semiconductors, Том 58, № 1, 01.2024, стр. 67-72.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{85a83d2c95a54f449e442847d118a557,

title = "In situ Ellipsometric Control of Growth Processes of ZnTe and CdTe Buffer Layers in Technology of Molecular Beam Epitaxy of Mercury Cadmium Telluride",

abstract = "The problems of in situ ellipsometric control during the growth of ZnTe and CdTe buffer layers intended for cadmium-mercury-tellurium epitaxy are considered. It has been established that for 20 nm ZnTe layers the spectral dependences of the optical constants near the absorption edge are smoothed, which indicates the presence of structural defects in the film. It has been shown that the microrelief of the CdTe growth surface is a criterion for the structural perfection of the layers and can be measured using an ellipsometer both at the early stages and during steady-state growth.",

keywords = "CdTe, growth defects, in situ ellipsometric control, microrelief, molecular beam epitaxy",

author = "Shvets, {V. A.} and Marin, {D. V.} and Yakushev, {M. V.} and Rykhlitskii, {S. V.}",

note = "This study was financially supported by a grant from the Ministry of Science and Higher Education of the Russian Federation no. 075-15-2020-797.",

year = "2024",

month = jan,

doi = "10.1134/S1063782624010147",

language = "English",

volume = "58",

pages = "67--72",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "PLEIADES PUBLISHING INC",

number = "1",

}

RIS

TY - JOUR

T1 - In situ Ellipsometric Control of Growth Processes of ZnTe and CdTe Buffer Layers in Technology of Molecular Beam Epitaxy of Mercury Cadmium Telluride

AU - Shvets, V. A.

AU - Marin, D. V.

AU - Yakushev, M. V.

AU - Rykhlitskii, S. V.

N1 - This study was financially supported by a grant from the Ministry of Science and Higher Education of the Russian Federation no. 075-15-2020-797.

PY - 2024/1

Y1 - 2024/1

N2 - The problems of in situ ellipsometric control during the growth of ZnTe and CdTe buffer layers intended for cadmium-mercury-tellurium epitaxy are considered. It has been established that for 20 nm ZnTe layers the spectral dependences of the optical constants near the absorption edge are smoothed, which indicates the presence of structural defects in the film. It has been shown that the microrelief of the CdTe growth surface is a criterion for the structural perfection of the layers and can be measured using an ellipsometer both at the early stages and during steady-state growth.

AB - The problems of in situ ellipsometric control during the growth of ZnTe and CdTe buffer layers intended for cadmium-mercury-tellurium epitaxy are considered. It has been established that for 20 nm ZnTe layers the spectral dependences of the optical constants near the absorption edge are smoothed, which indicates the presence of structural defects in the film. It has been shown that the microrelief of the CdTe growth surface is a criterion for the structural perfection of the layers and can be measured using an ellipsometer both at the early stages and during steady-state growth.

KW - CdTe

KW - growth defects

KW - in situ ellipsometric control

KW - microrelief

KW - molecular beam epitaxy

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85202757554&origin=inward&txGid=d16da0c9540f15350042ed19b827d8f7

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:001303627800002

UR - https://www.mendeley.com/catalogue/d7e56bfe-e7e6-333f-a193-847606e2fef8/

U2 - 10.1134/S1063782624010147

DO - 10.1134/S1063782624010147

M3 - Article

VL - 58

SP - 67

EP - 72

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 1

ER -

ID: 61182935