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High-performance top-gate thin-film transistor with an ultra-thin channel layer. / Yen, Te Jui; Chin, Albert; Gritsenko, Vladimir.

в: Nanomaterials, Том 10, № 11, 2145, 11.2020, стр. 1-8.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Yen, TJ, Chin, A & Gritsenko, V 2020, 'High-performance top-gate thin-film transistor with an ultra-thin channel layer', Nanomaterials, Том. 10, № 11, 2145, стр. 1-8. https://doi.org/10.3390/nano10112145

APA

Yen, T. J., Chin, A., & Gritsenko, V. (2020). High-performance top-gate thin-film transistor with an ultra-thin channel layer. Nanomaterials, 10(11), 1-8. [2145]. https://doi.org/10.3390/nano10112145

Vancouver

Yen TJ, Chin A, Gritsenko V. High-performance top-gate thin-film transistor with an ultra-thin channel layer. Nanomaterials. 2020 нояб.;10(11):1-8. 2145. doi: 10.3390/nano10112145

Author

Yen, Te Jui ; Chin, Albert ; Gritsenko, Vladimir. / High-performance top-gate thin-film transistor with an ultra-thin channel layer. в: Nanomaterials. 2020 ; Том 10, № 11. стр. 1-8.

BibTeX

@article{62a55158384649ecaec8734b51c26429,
title = "High-performance top-gate thin-film transistor with an ultra-thin channel layer",
abstract = "Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO2 TFTs, with a high field-effect mobility (µFE) of 136 cm2/Vs, a large on-current/off-current (ION/IOFF) of 1.5 × 108, and steep subthreshold slopes of 108 mV/dec. Here, µFE represents the maximum among the top-gate TFTs made on an amorphous SiO2 substrate, with a maximum process temperature of ≤ 400◦C. In contrast to a bottom-gate device, a top-gate device is the standard structure for monolithic integrated circuits (ICs). Such a superb device integrity was achieved by using an ultra-thin SnO2 channel layer of 4.5 nm and an HfO2 gate dielectric with a 3 nm SiO2 interfacial layer between the SnO2 and HfO2 . The inserted SiO2 layer is crucial for decreasing the charged defect scattering in the HfO2 and HfO2 /SnO2 interfaces to increase the mobility. Such high µFE, large ION, and low IOFF top-gate SnO2 devices with a coplanar structure are important for display, dynamic random-access memory, and monolithic three-dimensional ICs.",
keywords = "3D IC, Brain-mimic, Integrated circuit, Monolithic, SnO, TFT, Thin-film transistor, monolithic, OXIDE, PASSIVATION, INSULATOR, MOBILITY, brain-mimic, thin-film transistor, MOSFETS, SnO2, SYSTEMS, integrated circuit",
author = "Yen, {Te Jui} and Albert Chin and Vladimir Gritsenko",
note = "Funding Information: Funding: This research was funded by Ministry of Science and Technology of Taiwan, project no. 107-2221-E-009-092-MY3. Publisher Copyright: {\textcopyright} 2020 by the authors. Licensee MDPI, Basel, Switzerland. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2020",
month = nov,
doi = "10.3390/nano10112145",
language = "English",
volume = "10",
pages = "1--8",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "MDPI AG",
number = "11",

}

RIS

TY - JOUR

T1 - High-performance top-gate thin-film transistor with an ultra-thin channel layer

AU - Yen, Te Jui

AU - Chin, Albert

AU - Gritsenko, Vladimir

N1 - Funding Information: Funding: This research was funded by Ministry of Science and Technology of Taiwan, project no. 107-2221-E-009-092-MY3. Publisher Copyright: © 2020 by the authors. Licensee MDPI, Basel, Switzerland. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/11

Y1 - 2020/11

N2 - Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO2 TFTs, with a high field-effect mobility (µFE) of 136 cm2/Vs, a large on-current/off-current (ION/IOFF) of 1.5 × 108, and steep subthreshold slopes of 108 mV/dec. Here, µFE represents the maximum among the top-gate TFTs made on an amorphous SiO2 substrate, with a maximum process temperature of ≤ 400◦C. In contrast to a bottom-gate device, a top-gate device is the standard structure for monolithic integrated circuits (ICs). Such a superb device integrity was achieved by using an ultra-thin SnO2 channel layer of 4.5 nm and an HfO2 gate dielectric with a 3 nm SiO2 interfacial layer between the SnO2 and HfO2 . The inserted SiO2 layer is crucial for decreasing the charged defect scattering in the HfO2 and HfO2 /SnO2 interfaces to increase the mobility. Such high µFE, large ION, and low IOFF top-gate SnO2 devices with a coplanar structure are important for display, dynamic random-access memory, and monolithic three-dimensional ICs.

AB - Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO2 TFTs, with a high field-effect mobility (µFE) of 136 cm2/Vs, a large on-current/off-current (ION/IOFF) of 1.5 × 108, and steep subthreshold slopes of 108 mV/dec. Here, µFE represents the maximum among the top-gate TFTs made on an amorphous SiO2 substrate, with a maximum process temperature of ≤ 400◦C. In contrast to a bottom-gate device, a top-gate device is the standard structure for monolithic integrated circuits (ICs). Such a superb device integrity was achieved by using an ultra-thin SnO2 channel layer of 4.5 nm and an HfO2 gate dielectric with a 3 nm SiO2 interfacial layer between the SnO2 and HfO2 . The inserted SiO2 layer is crucial for decreasing the charged defect scattering in the HfO2 and HfO2 /SnO2 interfaces to increase the mobility. Such high µFE, large ION, and low IOFF top-gate SnO2 devices with a coplanar structure are important for display, dynamic random-access memory, and monolithic three-dimensional ICs.

KW - 3D IC

KW - Brain-mimic

KW - Integrated circuit

KW - Monolithic

KW - SnO

KW - TFT

KW - Thin-film transistor

KW - monolithic

KW - OXIDE

KW - PASSIVATION

KW - INSULATOR

KW - MOBILITY

KW - brain-mimic

KW - thin-film transistor

KW - MOSFETS

KW - SnO2

KW - SYSTEMS

KW - integrated circuit

UR - http://www.scopus.com/inward/record.url?scp=85094570156&partnerID=8YFLogxK

U2 - 10.3390/nano10112145

DO - 10.3390/nano10112145

M3 - Article

C2 - 33126463

AN - SCOPUS:85094570156

VL - 10

SP - 1

EP - 8

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 11

M1 - 2145

ER -

ID: 26004575