Research output: Contribution to journal › Article › peer-review
High-performance top-gate thin-film transistor with an ultra-thin channel layer. / Yen, Te Jui; Chin, Albert; Gritsenko, Vladimir.
In: Nanomaterials, Vol. 10, No. 11, 2145, 11.2020, p. 1-8.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - High-performance top-gate thin-film transistor with an ultra-thin channel layer
AU - Yen, Te Jui
AU - Chin, Albert
AU - Gritsenko, Vladimir
N1 - Funding Information: Funding: This research was funded by Ministry of Science and Technology of Taiwan, project no. 107-2221-E-009-092-MY3. Publisher Copyright: © 2020 by the authors. Licensee MDPI, Basel, Switzerland. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/11
Y1 - 2020/11
N2 - Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO2 TFTs, with a high field-effect mobility (µFE) of 136 cm2/Vs, a large on-current/off-current (ION/IOFF) of 1.5 × 108, and steep subthreshold slopes of 108 mV/dec. Here, µFE represents the maximum among the top-gate TFTs made on an amorphous SiO2 substrate, with a maximum process temperature of ≤ 400◦C. In contrast to a bottom-gate device, a top-gate device is the standard structure for monolithic integrated circuits (ICs). Such a superb device integrity was achieved by using an ultra-thin SnO2 channel layer of 4.5 nm and an HfO2 gate dielectric with a 3 nm SiO2 interfacial layer between the SnO2 and HfO2 . The inserted SiO2 layer is crucial for decreasing the charged defect scattering in the HfO2 and HfO2 /SnO2 interfaces to increase the mobility. Such high µFE, large ION, and low IOFF top-gate SnO2 devices with a coplanar structure are important for display, dynamic random-access memory, and monolithic three-dimensional ICs.
AB - Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO2 TFTs, with a high field-effect mobility (µFE) of 136 cm2/Vs, a large on-current/off-current (ION/IOFF) of 1.5 × 108, and steep subthreshold slopes of 108 mV/dec. Here, µFE represents the maximum among the top-gate TFTs made on an amorphous SiO2 substrate, with a maximum process temperature of ≤ 400◦C. In contrast to a bottom-gate device, a top-gate device is the standard structure for monolithic integrated circuits (ICs). Such a superb device integrity was achieved by using an ultra-thin SnO2 channel layer of 4.5 nm and an HfO2 gate dielectric with a 3 nm SiO2 interfacial layer between the SnO2 and HfO2 . The inserted SiO2 layer is crucial for decreasing the charged defect scattering in the HfO2 and HfO2 /SnO2 interfaces to increase the mobility. Such high µFE, large ION, and low IOFF top-gate SnO2 devices with a coplanar structure are important for display, dynamic random-access memory, and monolithic three-dimensional ICs.
KW - 3D IC
KW - Brain-mimic
KW - Integrated circuit
KW - Monolithic
KW - SnO
KW - TFT
KW - Thin-film transistor
KW - monolithic
KW - OXIDE
KW - PASSIVATION
KW - INSULATOR
KW - MOBILITY
KW - brain-mimic
KW - thin-film transistor
KW - MOSFETS
KW - SnO2
KW - SYSTEMS
KW - integrated circuit
UR - http://www.scopus.com/inward/record.url?scp=85094570156&partnerID=8YFLogxK
U2 - 10.3390/nano10112145
DO - 10.3390/nano10112145
M3 - Article
C2 - 33126463
AN - SCOPUS:85094570156
VL - 10
SP - 1
EP - 8
JO - Nanomaterials
JF - Nanomaterials
SN - 2079-4991
IS - 11
M1 - 2145
ER -
ID: 26004575