Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy. / Abramkin, D. S.; Petrushkov, M. O.; Emelyanov, E. A. и др.
в: Semiconductors, Том 55, № 2, 02.2021, стр. 194-201.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy
AU - Abramkin, D. S.
AU - Petrushkov, M. O.
AU - Emelyanov, E. A.
AU - Nenashev, A. V.
AU - Yesin, M. Yu
AU - Vasev, A. V.
AU - Putyato, M. A.
AU - Bogomolov, D. B.
AU - Gutakovskiy, A. K.
AU - Preobrazhenskiy, V. V.
N1 - Funding Information: The study was supported by the Russian Foundation for Basic Research and the Ministry of Science and Innovation Policy of Novosibirsk Region, project no. 19-42-543009. The part of the study concerned with HRTEM measurements were supported by the Russian Science Foundation, project 19-72-30023. Publisher Copyright: © 2021, Pleiades Publishing, Ltd. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/2
Y1 - 2021/2
N2 - The possibility of forming a strained pseudomorphous quantum well (QW) consisting of a InxGa1 –xAsyP1 –y quaternary alloy upon the deposition of InAs onto the surface of an epitaxial GaP/Si layer with a developed relief is demonstrated. The QW is studied by means of transmission electron microscopy and steady-state photoluminescence spectroscopy. The formation of two QW segments different in width and composition of the InxGa1 –xAsyP1 –y alloy is observed; in this case, an increase in the QW width is accompanied by a decrease in the content of In and As atoms. The lateral dimensions of the QW segments are no smaller than 20 nm. The QW segments correspond to two different low-temperature photoluminescence bands. The experimentally observed phenomena are interpreted on the assumption of transformation of the surface under the action of elastic strains during heteroepitaxy of InAs on the terraced GaP surface.
AB - The possibility of forming a strained pseudomorphous quantum well (QW) consisting of a InxGa1 –xAsyP1 –y quaternary alloy upon the deposition of InAs onto the surface of an epitaxial GaP/Si layer with a developed relief is demonstrated. The QW is studied by means of transmission electron microscopy and steady-state photoluminescence spectroscopy. The formation of two QW segments different in width and composition of the InxGa1 –xAsyP1 –y alloy is observed; in this case, an increase in the QW width is accompanied by a decrease in the content of In and As atoms. The lateral dimensions of the QW segments are no smaller than 20 nm. The QW segments correspond to two different low-temperature photoluminescence bands. The experimentally observed phenomena are interpreted on the assumption of transformation of the surface under the action of elastic strains during heteroepitaxy of InAs on the terraced GaP surface.
KW - elastic strains
KW - III–V compounds on silicon
KW - InAs/GaP quantum wells
KW - intermixing of materials
KW - molecular-beam epitaxy
KW - photoluminescence
KW - surface morphology
UR - http://www.scopus.com/inward/record.url?scp=85101212299&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/8020b8d8-653b-376b-b08d-6c077695efc0/
U2 - 10.1134/S1063782621020020
DO - 10.1134/S1063782621020020
M3 - Article
AN - SCOPUS:85101212299
VL - 55
SP - 194
EP - 201
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 2
ER -
ID: 28003881