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Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy. / Abramkin, D. S.; Petrushkov, M. O.; Emelyanov, E. A. et al.

In: Semiconductors, Vol. 55, No. 2, 02.2021, p. 194-201.

Research output: Contribution to journal › Article › peer-review

Harvard

Abramkin, DS, Petrushkov, MO, Emelyanov, EA, Nenashev, AV, Yesin, MY, Vasev, AV, Putyato, MA, Bogomolov, DB, Gutakovskiy, AK & Preobrazhenskiy, VV 2021, 'Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy', Semiconductors, vol. 55, no. 2, pp. 194-201. https://doi.org/10.1134/S1063782621020020

APA

Abramkin, D. S., Petrushkov, M. O., Emelyanov, E. A., Nenashev, A. V., Yesin, M. Y., Vasev, A. V., Putyato, M. A., Bogomolov, D. B., Gutakovskiy, A. K., & Preobrazhenskiy, V. V. (2021). Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy. Semiconductors, 55(2), 194-201. https://doi.org/10.1134/S1063782621020020

Vancouver

Abramkin DS, Petrushkov MO, Emelyanov EA, Nenashev AV, Yesin MY, Vasev AV et al. Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy. Semiconductors. 2021 Feb;55(2):194-201. doi: 10.1134/S1063782621020020

Author

Abramkin, D. S. ; Petrushkov, M. O. ; Emelyanov, E. A. et al. / Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy. In: Semiconductors. 2021 ; Vol. 55, No. 2. pp. 194-201.

BibTeX

@article{4d4a25bbcf354937bb36f8ec9c5e60c1,
title = "Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy",
abstract = "The possibility of forming a strained pseudomorphous quantum well (QW) consisting of a InxGa1 –xAsyP1 –y quaternary alloy upon the deposition of InAs onto the surface of an epitaxial GaP/Si layer with a developed relief is demonstrated. The QW is studied by means of transmission electron microscopy and steady-state photoluminescence spectroscopy. The formation of two QW segments different in width and composition of the InxGa1 –xAsyP1 –y alloy is observed; in this case, an increase in the QW width is accompanied by a decrease in the content of In and As atoms. The lateral dimensions of the QW segments are no smaller than 20 nm. The QW segments correspond to two different low-temperature photoluminescence bands. The experimentally observed phenomena are interpreted on the assumption of transformation of the surface under the action of elastic strains during heteroepitaxy of InAs on the terraced GaP surface.",
keywords = "elastic strains, III–V compounds on silicon, InAs/GaP quantum wells, intermixing of materials, molecular-beam epitaxy, photoluminescence, surface morphology",
author = "Abramkin, {D. S.} and Petrushkov, {M. O.} and Emelyanov, {E. A.} and Nenashev, {A. V.} and Yesin, {M. Yu} and Vasev, {A. V.} and Putyato, {M. A.} and Bogomolov, {D. B.} and Gutakovskiy, {A. K.} and Preobrazhenskiy, {V. V.}",
note = "Funding Information: The study was supported by the Russian Foundation for Basic Research and the Ministry of Science and Innovation Policy of Novosibirsk Region, project no. 19-42-543009. The part of the study concerned with HRTEM measurements were supported by the Russian Science Foundation, project 19-72-30023. Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = feb,
doi = "10.1134/S1063782621020020",
language = "English",
volume = "55",
pages = "194--201",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "2",

}

RIS

TY - JOUR

T1 - Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

AU - Abramkin, D. S.

AU - Petrushkov, M. O.

AU - Emelyanov, E. A.

AU - Nenashev, A. V.

AU - Yesin, M. Yu

AU - Vasev, A. V.

AU - Putyato, M. A.

AU - Bogomolov, D. B.

AU - Gutakovskiy, A. K.

AU - Preobrazhenskiy, V. V.

N1 - Funding Information: The study was supported by the Russian Foundation for Basic Research and the Ministry of Science and Innovation Policy of Novosibirsk Region, project no. 19-42-543009. The part of the study concerned with HRTEM measurements were supported by the Russian Science Foundation, project 19-72-30023. Publisher Copyright: © 2021, Pleiades Publishing, Ltd. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/2

Y1 - 2021/2

N2 - The possibility of forming a strained pseudomorphous quantum well (QW) consisting of a InxGa1 –xAsyP1 –y quaternary alloy upon the deposition of InAs onto the surface of an epitaxial GaP/Si layer with a developed relief is demonstrated. The QW is studied by means of transmission electron microscopy and steady-state photoluminescence spectroscopy. The formation of two QW segments different in width and composition of the InxGa1 –xAsyP1 –y alloy is observed; in this case, an increase in the QW width is accompanied by a decrease in the content of In and As atoms. The lateral dimensions of the QW segments are no smaller than 20 nm. The QW segments correspond to two different low-temperature photoluminescence bands. The experimentally observed phenomena are interpreted on the assumption of transformation of the surface under the action of elastic strains during heteroepitaxy of InAs on the terraced GaP surface.

AB - The possibility of forming a strained pseudomorphous quantum well (QW) consisting of a InxGa1 –xAsyP1 –y quaternary alloy upon the deposition of InAs onto the surface of an epitaxial GaP/Si layer with a developed relief is demonstrated. The QW is studied by means of transmission electron microscopy and steady-state photoluminescence spectroscopy. The formation of two QW segments different in width and composition of the InxGa1 –xAsyP1 –y alloy is observed; in this case, an increase in the QW width is accompanied by a decrease in the content of In and As atoms. The lateral dimensions of the QW segments are no smaller than 20 nm. The QW segments correspond to two different low-temperature photoluminescence bands. The experimentally observed phenomena are interpreted on the assumption of transformation of the surface under the action of elastic strains during heteroepitaxy of InAs on the terraced GaP surface.

KW - elastic strains

KW - III–V compounds on silicon

KW - InAs/GaP quantum wells

KW - intermixing of materials

KW - molecular-beam epitaxy

KW - photoluminescence

KW - surface morphology

UR - http://www.scopus.com/inward/record.url?scp=85101212299&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/8020b8d8-653b-376b-b08d-6c077695efc0/

U2 - 10.1134/S1063782621020020

DO - 10.1134/S1063782621020020

M3 - Article

AN - SCOPUS:85101212299

VL - 55

SP - 194

EP - 201

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -

ID: 28003881