TY - JOUR

T1 - Formation of Germanium Nanocrystals and Amorphous Nanoclusters in GeO[SiO] and GeO[SiO2] Films Using Electron Beam Annealing

AU - Konstantinov, V. O.

AU - Baranov, E. A.

AU - Fan, Zhang

AU - Shchukin, V. G.

AU - Zamchiy, A. O.

AU - Volodin, V. A.

N1 - These studies were supported financially by the Ministry of Science and Higher Education of the Russian Federation. The work on electron-beam annealing was carried out under state assignment of IT SB RAS, project no. 121031800218-5. The work on the study of the structure of the films was carried out according to the state order of the Institute of Physics of Semiconductors of the SB RAS, project no. FWGW-2022-0011.

PY - 2024/9/18

Y1 - 2024/9/18

N2 - Abstract: Electron beam annealing was carried out to form amorphous and crystalline germanium clusters in GeO[SiO] and GeO[SiO2] films deposited on quartz and mono crystalline silicon substrates. Using electron microscopy, Raman spectroscopy, and light transmission and reflection spectroscopy, the structural transformations of the films and their optical properties were studied. From the analysis of Raman spectra, it was shown that amorphous germanium nano clusters are present in the as-deposited GeO[SiO] film, while they are not observed in the as- deposited GeO[SiO2] film. Regimes of electron beam annealing which are necessary for the formation of germanium nano crystals in GeO[SiO] and GeO[SiO2] films were found. It was shown that, at the same annealing parameters, the fraction of the crystalline phase of germanium in GeO[SiO] films were smaller than in GeO[SiO2] films. In addition, it was found that the fraction of the crystalline phase at the same annealing parameters is larger for films on a quartz substrate than on monocrystalline silicon substrate. The sizes of germanium nanocrystals formed as a result of electron beam annealing were determined from Raman spectra analysis. The proposed method of obtaining amorphous germanium nanoclusters and nanocrystals in films of nonstoichiometric germanosilicate glasses using electron beam annealing can be used to create ordered arrays of such nanostructures.

AB - Abstract: Electron beam annealing was carried out to form amorphous and crystalline germanium clusters in GeO[SiO] and GeO[SiO2] films deposited on quartz and mono crystalline silicon substrates. Using electron microscopy, Raman spectroscopy, and light transmission and reflection spectroscopy, the structural transformations of the films and their optical properties were studied. From the analysis of Raman spectra, it was shown that amorphous germanium nano clusters are present in the as-deposited GeO[SiO] film, while they are not observed in the as- deposited GeO[SiO2] film. Regimes of electron beam annealing which are necessary for the formation of germanium nano crystals in GeO[SiO] and GeO[SiO2] films were found. It was shown that, at the same annealing parameters, the fraction of the crystalline phase of germanium in GeO[SiO] films were smaller than in GeO[SiO2] films. In addition, it was found that the fraction of the crystalline phase at the same annealing parameters is larger for films on a quartz substrate than on monocrystalline silicon substrate. The sizes of germanium nanocrystals formed as a result of electron beam annealing were determined from Raman spectra analysis. The proposed method of obtaining amorphous germanium nanoclusters and nanocrystals in films of nonstoichiometric germanosilicate glasses using electron beam annealing can be used to create ordered arrays of such nanostructures.

KW - electron beam annealing

KW - films of nonstoichiometric germanosilicate glass

KW - germanium nano clusters and nano crystals

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:001308315500038

UR - https://www.mendeley.com/catalogue/61e041fb-a3e1-32a7-9f6a-a292dd46539d/

U2 - 10.1134/S1063784224030162

DO - 10.1134/S1063784224030162

M3 - Article

VL - 69

SP - 898

EP - 905

JO - Technical Physics

JF - Technical Physics

SN - 1063-7842

IS - 4

ER -