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Enhanced InAs phase formation in the In+- and As+-implanted SiO2 films covered with Si3N4 layers. / Tyschenko, Ida; Si, Zhongbin; Volodin, Vladimir и др.

в: Materials Letters, Том 338, 134041, 01.05.2023.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Tyschenko, I, Si, Z, Volodin, V, Cherkova, S & Popov, V 2023, 'Enhanced InAs phase formation in the In+- and As+-implanted SiO2 films covered with Si3N4 layers', Materials Letters, Том. 338, 134041. https://doi.org/10.1016/j.matlet.2023.134041

APA

Tyschenko, I., Si, Z., Volodin, V., Cherkova, S., & Popov, V. (2023). Enhanced InAs phase formation in the In+- and As+-implanted SiO2 films covered with Si3N4 layers. Materials Letters, 338, [134041]. https://doi.org/10.1016/j.matlet.2023.134041

Vancouver

Tyschenko I, Si Z, Volodin V, Cherkova S, Popov V. Enhanced InAs phase formation in the In+- and As+-implanted SiO2 films covered with Si3N4 layers. Materials Letters. 2023 май 1;338:134041. doi: 10.1016/j.matlet.2023.134041

Author

Tyschenko, Ida ; Si, Zhongbin ; Volodin, Vladimir и др. / Enhanced InAs phase formation in the In+- and As+-implanted SiO2 films covered with Si3N4 layers. в: Materials Letters. 2023 ; Том 338.

BibTeX

@article{9ec3cc31b8c0414aa60e3f822c45cc39,
title = "Enhanced InAs phase formation in the In+- and As+-implanted SiO2 films covered with Si3N4 layers",
abstract = "The Raman spectroscopy and room-temperature photoluminescence were used to study the properties of the In+ and As+ ion-implanted SiO2 films as a function of annealing temperature Ta at 700–1100 °C. No features of the InAs phase were obtained in the Raman spectra of the native SiO2 films irrespective of Ta. In the ion-implanted SiO2 films encapsulated with Si3N4, three Raman peaks at 202 cm−1, 256 cm−1 and 232 cm−1 corresponding to transverse and longitudinal optical phonons in black As and to longitudinal optical phonons in InAs, respectively, were detected. The SiO2 encapsulation effect on the enhanced InAs phase formation is discussed. A photoluminescence of around 556 nm was observed from the encapsulated ion-implanted SiO2 films and reached its intensity maximum after the annealing at 1000 °C.",
keywords = "InAs, Ion implantation, Nanocrystals, Optical phonons, Photoluminescence, SiO2",
author = "Ida Tyschenko and Zhongbin Si and Vladimir Volodin and Svetlana Cherkova and Vladimir Popov",
note = "We are grateful to Dr. M. Voelskow for his help in the RBS investigations. The Raman spectra were recorded on the equipment of CKP VTAN NSU. The study was supported by the Ministry of Education and Science of the Russian Federation [Project GZ 0242-2021-0003].",
year = "2023",
month = may,
day = "1",
doi = "10.1016/j.matlet.2023.134041",
language = "English",
volume = "338",
journal = "Materials Letters",
issn = "0167-577X",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Enhanced InAs phase formation in the In+- and As+-implanted SiO2 films covered with Si3N4 layers

AU - Tyschenko, Ida

AU - Si, Zhongbin

AU - Volodin, Vladimir

AU - Cherkova, Svetlana

AU - Popov, Vladimir

N1 - We are grateful to Dr. M. Voelskow for his help in the RBS investigations. The Raman spectra were recorded on the equipment of CKP VTAN NSU. The study was supported by the Ministry of Education and Science of the Russian Federation [Project GZ 0242-2021-0003].

PY - 2023/5/1

Y1 - 2023/5/1

N2 - The Raman spectroscopy and room-temperature photoluminescence were used to study the properties of the In+ and As+ ion-implanted SiO2 films as a function of annealing temperature Ta at 700–1100 °C. No features of the InAs phase were obtained in the Raman spectra of the native SiO2 films irrespective of Ta. In the ion-implanted SiO2 films encapsulated with Si3N4, three Raman peaks at 202 cm−1, 256 cm−1 and 232 cm−1 corresponding to transverse and longitudinal optical phonons in black As and to longitudinal optical phonons in InAs, respectively, were detected. The SiO2 encapsulation effect on the enhanced InAs phase formation is discussed. A photoluminescence of around 556 nm was observed from the encapsulated ion-implanted SiO2 films and reached its intensity maximum after the annealing at 1000 °C.

AB - The Raman spectroscopy and room-temperature photoluminescence were used to study the properties of the In+ and As+ ion-implanted SiO2 films as a function of annealing temperature Ta at 700–1100 °C. No features of the InAs phase were obtained in the Raman spectra of the native SiO2 films irrespective of Ta. In the ion-implanted SiO2 films encapsulated with Si3N4, three Raman peaks at 202 cm−1, 256 cm−1 and 232 cm−1 corresponding to transverse and longitudinal optical phonons in black As and to longitudinal optical phonons in InAs, respectively, were detected. The SiO2 encapsulation effect on the enhanced InAs phase formation is discussed. A photoluminescence of around 556 nm was observed from the encapsulated ion-implanted SiO2 films and reached its intensity maximum after the annealing at 1000 °C.

KW - InAs

KW - Ion implantation

KW - Nanocrystals

KW - Optical phonons

KW - Photoluminescence

KW - SiO2

UR - https://www.scopus.com/inward/record.url?eid=2-s2.0-85148037957&partnerID=40&md5=f08c9b490be6a4a707de1161004dc67a

UR - https://www.mendeley.com/catalogue/1f22153f-8368-3fed-9603-556013600e17/

U2 - 10.1016/j.matlet.2023.134041

DO - 10.1016/j.matlet.2023.134041

M3 - Article

VL - 338

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

M1 - 134041

ER -

ID: 49083476