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Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. / Rahim, Abdur; Gusev, G. M.; Kvon, Z. D. и др.

в: Microelectronic Engineering, Том 206, 01.02.2019, стр. 55-59.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Rahim, A, Gusev, GM, Kvon, ZD, Olshanetsky, EB, Mikhailov, NN & Dvoretsky, SA 2019, 'Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators', Microelectronic Engineering, Том. 206, стр. 55-59. https://doi.org/10.1016/j.mee.2018.12.011

APA

Rahim, A., Gusev, G. M., Kvon, Z. D., Olshanetsky, E. B., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, 206, 55-59. https://doi.org/10.1016/j.mee.2018.12.011

Vancouver

Rahim A, Gusev GM, Kvon ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering. 2019 февр. 1;206:55-59. doi: 10.1016/j.mee.2018.12.011

Author

Rahim, Abdur ; Gusev, G. M. ; Kvon, Z. D. и др. / Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. в: Microelectronic Engineering. 2019 ; Том 206. стр. 55-59.

BibTeX

@article{d88277dc35924a14a3e34d61e2ffe139,
title = "Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators",
abstract = "We present experimental results of non-linear transport in HgTe-based 2D topological insulators, where the conductance is dominated by Dirac-like helical edge states when the Fermi level is pinned to the bulk insulating gap. We find that hot carrier's energy relaxation is faster close to the charge neutrality point (CNP) which can be attributed to localized nature and incompressibility of charge puddles resulting from inhomogeneous charge distribution near CNP. The tunnel-coupling of these puddles (quantum dots) to 1D edge channels can randomize phase memory leading to incoherent inelastic processes. Hot edge carriers, excited by the electric field, relax to equilibrium via thermalization in multiple puddles resulting in the emission of phonons in the puddles. At relatively low temperature (T ≤ 10 K), the energy relaxation time shows strong temperature dependence (τε ∝ (Te −5)), which is interpreted as small angle scattering, consistent with resistance saturation at low temperatures.",
keywords = "electron-phonon scattering, energy relaxation mechanisms, inelastic processes, Non-linear transport, Topological insulators",
author = "Abdur Rahim and Gusev, {G. M.} and Kvon, {Z. D.} and Olshanetsky, {E. B.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.}",
note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",
year = "2019",
month = feb,
day = "1",
doi = "10.1016/j.mee.2018.12.011",
language = "English",
volume = "206",
pages = "55--59",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators

AU - Rahim, Abdur

AU - Gusev, G. M.

AU - Kvon, Z. D.

AU - Olshanetsky, E. B.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

N1 - Publisher Copyright: © 2019 Elsevier B.V.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - We present experimental results of non-linear transport in HgTe-based 2D topological insulators, where the conductance is dominated by Dirac-like helical edge states when the Fermi level is pinned to the bulk insulating gap. We find that hot carrier's energy relaxation is faster close to the charge neutrality point (CNP) which can be attributed to localized nature and incompressibility of charge puddles resulting from inhomogeneous charge distribution near CNP. The tunnel-coupling of these puddles (quantum dots) to 1D edge channels can randomize phase memory leading to incoherent inelastic processes. Hot edge carriers, excited by the electric field, relax to equilibrium via thermalization in multiple puddles resulting in the emission of phonons in the puddles. At relatively low temperature (T ≤ 10 K), the energy relaxation time shows strong temperature dependence (τε ∝ (Te −5)), which is interpreted as small angle scattering, consistent with resistance saturation at low temperatures.

AB - We present experimental results of non-linear transport in HgTe-based 2D topological insulators, where the conductance is dominated by Dirac-like helical edge states when the Fermi level is pinned to the bulk insulating gap. We find that hot carrier's energy relaxation is faster close to the charge neutrality point (CNP) which can be attributed to localized nature and incompressibility of charge puddles resulting from inhomogeneous charge distribution near CNP. The tunnel-coupling of these puddles (quantum dots) to 1D edge channels can randomize phase memory leading to incoherent inelastic processes. Hot edge carriers, excited by the electric field, relax to equilibrium via thermalization in multiple puddles resulting in the emission of phonons in the puddles. At relatively low temperature (T ≤ 10 K), the energy relaxation time shows strong temperature dependence (τε ∝ (Te −5)), which is interpreted as small angle scattering, consistent with resistance saturation at low temperatures.

KW - electron-phonon scattering

KW - energy relaxation mechanisms

KW - inelastic processes

KW - Non-linear transport

KW - Topological insulators

UR - http://www.scopus.com/inward/record.url?scp=85060287350&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2018.12.011

DO - 10.1016/j.mee.2018.12.011

M3 - Article

AN - SCOPUS:85060287350

VL - 206

SP - 55

EP - 59

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -

ID: 18295759