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Electronic structure and charge transport in nonstoichiometric tantalum oxide. / Perevalov, T. V.; Gritsenko, V. A.; Gismatulin, A. A. и др.

в: Nanotechnology, Том 29, № 26, 264001, 29.06.2018.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Perevalov, TV, Gritsenko, VA, Gismatulin, AA, Voronkovskii, VA, Gerasimova, AK, Aliev, VS & Prosvirin, IA 2018, 'Electronic structure and charge transport in nonstoichiometric tantalum oxide', Nanotechnology, Том. 29, № 26, 264001. https://doi.org/10.1088/1361-6528/aaba4c

APA

Perevalov, T. V., Gritsenko, V. A., Gismatulin, A. A., Voronkovskii, V. A., Gerasimova, A. K., Aliev, V. S., & Prosvirin, I. A. (2018). Electronic structure and charge transport in nonstoichiometric tantalum oxide. Nanotechnology, 29(26), [264001]. https://doi.org/10.1088/1361-6528/aaba4c

Vancouver

Perevalov TV, Gritsenko VA, Gismatulin AA, Voronkovskii VA, Gerasimova AK, Aliev VS и др. Electronic structure and charge transport in nonstoichiometric tantalum oxide. Nanotechnology. 2018 июнь 29;29(26):264001. doi: 10.1088/1361-6528/aaba4c

Author

Perevalov, T. V. ; Gritsenko, V. A. ; Gismatulin, A. A. и др. / Electronic structure and charge transport in nonstoichiometric tantalum oxide. в: Nanotechnology. 2018 ; Том 29, № 26.

BibTeX

@article{72f901195d4c41f9922dd6e9a0bac1cf,
title = "Electronic structure and charge transport in nonstoichiometric tantalum oxide",
abstract = "The atomic and electronic structure of nonstoichiometric oxygen-deficient tantalum oxide TaOx<2.5 grown by ion beam sputtering deposition was studied. The TaOx film content was analyzed by x-ray photoelectron spectroscopy and by quantum-chemistry simulation. TaOx is composed of Ta2O5, metallic tantalum clusters and tantalum suboxides. A method for evaluating the stoichiometry parameter of TaOx from the comparison of experimental and theoretical photoelectron valence band spectra is proposed. The charge transport properties of TaOx were experimentally studied and the transport mechanism was quantitatively analyzed with four theoretical dielectric conductivity models. It was found that the charge transport in almost stoichiometric and nonstoichiometric tantalum oxide can be consistently described by the phonon-assisted tunneling between traps.",
keywords = "charge localization, charge transport, electronic structure, oxygen vacancy, photoelectron spectroscopy, quantumchemistry calculations, THIN-FILMS, TRAP, MECHANISMS, TAOX, OXYGEN VACANCY, quantum-chemistry calculations, CONDUCTION, CRYSTALLINE",
author = "Perevalov, {T. V.} and Gritsenko, {V. A.} and Gismatulin, {A. A.} and Voronkovskii, {V. A.} and Gerasimova, {A. K.} and Aliev, {V. Sh} and Prosvirin, {I. A.}",
year = "2018",
month = jun,
day = "29",
doi = "10.1088/1361-6528/aaba4c",
language = "English",
volume = "29",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "26",

}

RIS

TY - JOUR

T1 - Electronic structure and charge transport in nonstoichiometric tantalum oxide

AU - Perevalov, T. V.

AU - Gritsenko, V. A.

AU - Gismatulin, A. A.

AU - Voronkovskii, V. A.

AU - Gerasimova, A. K.

AU - Aliev, V. Sh

AU - Prosvirin, I. A.

PY - 2018/6/29

Y1 - 2018/6/29

N2 - The atomic and electronic structure of nonstoichiometric oxygen-deficient tantalum oxide TaOx<2.5 grown by ion beam sputtering deposition was studied. The TaOx film content was analyzed by x-ray photoelectron spectroscopy and by quantum-chemistry simulation. TaOx is composed of Ta2O5, metallic tantalum clusters and tantalum suboxides. A method for evaluating the stoichiometry parameter of TaOx from the comparison of experimental and theoretical photoelectron valence band spectra is proposed. The charge transport properties of TaOx were experimentally studied and the transport mechanism was quantitatively analyzed with four theoretical dielectric conductivity models. It was found that the charge transport in almost stoichiometric and nonstoichiometric tantalum oxide can be consistently described by the phonon-assisted tunneling between traps.

AB - The atomic and electronic structure of nonstoichiometric oxygen-deficient tantalum oxide TaOx<2.5 grown by ion beam sputtering deposition was studied. The TaOx film content was analyzed by x-ray photoelectron spectroscopy and by quantum-chemistry simulation. TaOx is composed of Ta2O5, metallic tantalum clusters and tantalum suboxides. A method for evaluating the stoichiometry parameter of TaOx from the comparison of experimental and theoretical photoelectron valence band spectra is proposed. The charge transport properties of TaOx were experimentally studied and the transport mechanism was quantitatively analyzed with four theoretical dielectric conductivity models. It was found that the charge transport in almost stoichiometric and nonstoichiometric tantalum oxide can be consistently described by the phonon-assisted tunneling between traps.

KW - charge localization

KW - charge transport

KW - electronic structure

KW - oxygen vacancy

KW - photoelectron spectroscopy

KW - quantumchemistry calculations

KW - THIN-FILMS

KW - TRAP

KW - MECHANISMS

KW - TAOX

KW - OXYGEN VACANCY

KW - quantum-chemistry calculations

KW - CONDUCTION

KW - CRYSTALLINE

UR - http://www.scopus.com/inward/record.url?scp=85047758530&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/aaba4c

DO - 10.1088/1361-6528/aaba4c

M3 - Article

C2 - 29589838

AN - SCOPUS:85047758530

VL - 29

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 26

M1 - 264001

ER -

ID: 13668229