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Electron-Beam Radiation Effects at the Molecular-Beam Epitaxial Growth of CaF2 Film on Silicon. / Dvurechenskii, A. V.; Kacyuba, A. V.; Kamaev, G. N. и др.

в: Bulletin of the Russian Academy of Sciences: Physics, Том 87, № 6, 2023, стр. 809-812.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Dvurechenskii, AV, Kacyuba, AV, Kamaev, GN & Volodin, VA 2023, 'Electron-Beam Radiation Effects at the Molecular-Beam Epitaxial Growth of CaF2 Film on Silicon', Bulletin of the Russian Academy of Sciences: Physics, Том. 87, № 6, стр. 809-812. https://doi.org/10.3103/S106287382370199X

APA

Dvurechenskii, A. V., Kacyuba, A. V., Kamaev, G. N., & Volodin, V. A. (2023). Electron-Beam Radiation Effects at the Molecular-Beam Epitaxial Growth of CaF2 Film on Silicon. Bulletin of the Russian Academy of Sciences: Physics, 87(6), 809-812. https://doi.org/10.3103/S106287382370199X

Vancouver

Dvurechenskii AV, Kacyuba AV, Kamaev GN, Volodin VA. Electron-Beam Radiation Effects at the Molecular-Beam Epitaxial Growth of CaF2 Film on Silicon. Bulletin of the Russian Academy of Sciences: Physics. 2023;87(6):809-812. doi: 10.3103/S106287382370199X

Author

Dvurechenskii, A. V. ; Kacyuba, A. V. ; Kamaev, G. N. и др. / Electron-Beam Radiation Effects at the Molecular-Beam Epitaxial Growth of CaF2 Film on Silicon. в: Bulletin of the Russian Academy of Sciences: Physics. 2023 ; Том 87, № 6. стр. 809-812.

BibTeX

@article{48c841c15050475891d19077457f73ef,
title = "Electron-Beam Radiation Effects at the Molecular-Beam Epitaxial Growth of CaF2 Film on Silicon",
abstract = "The formation of CaSi2 films on Si(111) by molecular-beam epitaxy (MBE) under fast electron irradiation of CaF2 layers is investigated in the article. The mechanisms and regularities of the changes in the structure and elemental composition of the CaF2/CaSi2/Si system under the influence of an electron beam are established in the present contribution, both directly during the CaF2 growth and after the CaF2 film formation. The method of solid-phase extraction (SPE) is proposed with a subsequent Si sputtering during the electron-beam radiation of the CaF2 film, which leads to a decrease in the CaSi2 film surface roughness and defects density.",
keywords = "calcium compounds, crystal structure, electron-beam radiation, molecular-beam epitaxy, nanostructures, silicon",
author = "Dvurechenskii, {A. V.} and Kacyuba, {A. V.} and Kamaev, {G. N.} and Volodin, {V. A.}",
note = "FUNDING: The research was supported by the Russian Foundation for Basic Research and “Rosatom” State Corporation, project no. 20-21-00028.",
year = "2023",
doi = "10.3103/S106287382370199X",
language = "English",
volume = "87",
pages = "809--812",
journal = "Bulletin of the Russian Academy of Sciences: Physics",
issn = "1062-8738",
publisher = "PLEIADES PUBLISHING INC",
number = "6",

}

RIS

TY - JOUR

T1 - Electron-Beam Radiation Effects at the Molecular-Beam Epitaxial Growth of CaF2 Film on Silicon

AU - Dvurechenskii, A. V.

AU - Kacyuba, A. V.

AU - Kamaev, G. N.

AU - Volodin, V. A.

N1 - FUNDING: The research was supported by the Russian Foundation for Basic Research and “Rosatom” State Corporation, project no. 20-21-00028.

PY - 2023

Y1 - 2023

N2 - The formation of CaSi2 films on Si(111) by molecular-beam epitaxy (MBE) under fast electron irradiation of CaF2 layers is investigated in the article. The mechanisms and regularities of the changes in the structure and elemental composition of the CaF2/CaSi2/Si system under the influence of an electron beam are established in the present contribution, both directly during the CaF2 growth and after the CaF2 film formation. The method of solid-phase extraction (SPE) is proposed with a subsequent Si sputtering during the electron-beam radiation of the CaF2 film, which leads to a decrease in the CaSi2 film surface roughness and defects density.

AB - The formation of CaSi2 films on Si(111) by molecular-beam epitaxy (MBE) under fast electron irradiation of CaF2 layers is investigated in the article. The mechanisms and regularities of the changes in the structure and elemental composition of the CaF2/CaSi2/Si system under the influence of an electron beam are established in the present contribution, both directly during the CaF2 growth and after the CaF2 film formation. The method of solid-phase extraction (SPE) is proposed with a subsequent Si sputtering during the electron-beam radiation of the CaF2 film, which leads to a decrease in the CaSi2 film surface roughness and defects density.

KW - calcium compounds

KW - crystal structure

KW - electron-beam radiation

KW - molecular-beam epitaxy

KW - nanostructures

KW - silicon

UR - https://www.mendeley.com/catalogue/bf71567b-8954-3034-be29-9756d0599b04/

U2 - 10.3103/S106287382370199X

DO - 10.3103/S106287382370199X

M3 - Article

VL - 87

SP - 809

EP - 812

JO - Bulletin of the Russian Academy of Sciences: Physics

JF - Bulletin of the Russian Academy of Sciences: Physics

SN - 1062-8738

IS - 6

ER -

ID: 55446371