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Electron-Beam Crystallization of Thin Films of Amorphous Silicon Suboxide. / Baranov, E. A.; Konstantinov, V. O.; Shchukin, V. G. и др.

в: Technical Physics Letters, Том 47, № 3, 03.2021, стр. 263-265.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Baranov, EA, Konstantinov, VO, Shchukin, VG, Zamchiy, AO, Merkulova, IE, Lunev, NA & Volodin, VA 2021, 'Electron-Beam Crystallization of Thin Films of Amorphous Silicon Suboxide', Technical Physics Letters, Том. 47, № 3, стр. 263-265. https://doi.org/10.1134/S1063785021030172

APA

Baranov, E. A., Konstantinov, V. O., Shchukin, V. G., Zamchiy, A. O., Merkulova, I. E., Lunev, N. A., & Volodin, V. A. (2021). Electron-Beam Crystallization of Thin Films of Amorphous Silicon Suboxide. Technical Physics Letters, 47(3), 263-265. https://doi.org/10.1134/S1063785021030172

Vancouver

Baranov EA, Konstantinov VO, Shchukin VG, Zamchiy AO, Merkulova IE, Lunev NA и др. Electron-Beam Crystallization of Thin Films of Amorphous Silicon Suboxide. Technical Physics Letters. 2021 март;47(3):263-265. doi: 10.1134/S1063785021030172

Author

Baranov, E. A. ; Konstantinov, V. O. ; Shchukin, V. G. и др. / Electron-Beam Crystallization of Thin Films of Amorphous Silicon Suboxide. в: Technical Physics Letters. 2021 ; Том 47, № 3. стр. 263-265.

BibTeX

@article{32af9db0ea084bbd94b54f1532ca5c73,
title = "Electron-Beam Crystallization of Thin Films of Amorphous Silicon Suboxide",
abstract = "Polycrystalline silicon (poly-Si) has been obtained for the first time as a result of irradiating a film of amorphous hydrogenated silicon suboxide with the stoichiometric coefficient of 0.5 (a-SiO0.5:H) and thickness of 580 nm by an electron beam. The electron-beam accelerating voltage and current are 2000 V and 100 mA, respectively. Raman spectra of the silicon films after annealing are obtained as dependent on the time of electron-beam irradiation of the initial material. It is shown that the stress in polycrystalline silicon formed as a result of annealing changes from compression to extension, depending on the irradiation time.",
keywords = "electron-beam annealing, polycrystalline silicon, silicon-suboxide thin films",
author = "Baranov, {E. A.} and Konstantinov, {V. O.} and Shchukin, {V. G.} and Zamchiy, {A. O.} and Merkulova, {I. E.} and Lunev, {N. A.} and Volodin, {V. A.}",
note = "Funding Information: This study was supported by a grant of the President of the Russian Federation (no. MK-638.2019.8) in the part concerning the synthesis and diagnostics of silicon suboxide films and by the Russian Foundation for Basic Research (project no. 19-08-00848) in the part concerning the electron-beam annealing. Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",
year = "2021",
month = mar,
doi = "10.1134/S1063785021030172",
language = "English",
volume = "47",
pages = "263--265",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "3",

}

RIS

TY - JOUR

T1 - Electron-Beam Crystallization of Thin Films of Amorphous Silicon Suboxide

AU - Baranov, E. A.

AU - Konstantinov, V. O.

AU - Shchukin, V. G.

AU - Zamchiy, A. O.

AU - Merkulova, I. E.

AU - Lunev, N. A.

AU - Volodin, V. A.

N1 - Funding Information: This study was supported by a grant of the President of the Russian Federation (no. MK-638.2019.8) in the part concerning the synthesis and diagnostics of silicon suboxide films and by the Russian Foundation for Basic Research (project no. 19-08-00848) in the part concerning the electron-beam annealing. Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/3

Y1 - 2021/3

N2 - Polycrystalline silicon (poly-Si) has been obtained for the first time as a result of irradiating a film of amorphous hydrogenated silicon suboxide with the stoichiometric coefficient of 0.5 (a-SiO0.5:H) and thickness of 580 nm by an electron beam. The electron-beam accelerating voltage and current are 2000 V and 100 mA, respectively. Raman spectra of the silicon films after annealing are obtained as dependent on the time of electron-beam irradiation of the initial material. It is shown that the stress in polycrystalline silicon formed as a result of annealing changes from compression to extension, depending on the irradiation time.

AB - Polycrystalline silicon (poly-Si) has been obtained for the first time as a result of irradiating a film of amorphous hydrogenated silicon suboxide with the stoichiometric coefficient of 0.5 (a-SiO0.5:H) and thickness of 580 nm by an electron beam. The electron-beam accelerating voltage and current are 2000 V and 100 mA, respectively. Raman spectra of the silicon films after annealing are obtained as dependent on the time of electron-beam irradiation of the initial material. It is shown that the stress in polycrystalline silicon formed as a result of annealing changes from compression to extension, depending on the irradiation time.

KW - electron-beam annealing

KW - polycrystalline silicon

KW - silicon-suboxide thin films

UR - http://www.scopus.com/inward/record.url?scp=85120956517&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/02bd6d08-fd69-3fa0-9e3c-62c99100fd1a/

U2 - 10.1134/S1063785021030172

DO - 10.1134/S1063785021030172

M3 - Article

AN - SCOPUS:85120956517

VL - 47

SP - 263

EP - 265

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 3

ER -

ID: 34986524