Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles

Standard

Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles. / Remes, Zdenek; Stuchlik, Jiri; Stuchlikova, The-ha и др.

в: EPJ Applied Physics, Том 88, № 3, 19025, 01.12.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Remes, Z, Stuchlik, J, Stuchlikova, T, Kupcik, J, Mortet, V, Taylor, A, Ashcheulov, P & Volodin, VA 2019, 'Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles', EPJ Applied Physics, Том. 88, № 3, 19025. https://doi.org/10.1051/epjap/2020190253

APA

Remes, Z., Stuchlik, J., Stuchlikova, T., Kupcik, J., Mortet, V., Taylor, A., Ashcheulov, P., & Volodin, V. A. (2019). Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles. EPJ Applied Physics, 88(3), [19025]. https://doi.org/10.1051/epjap/2020190253

Vancouver

Remes Z, Stuchlik J, Stuchlikova T, Kupcik J, Mortet V, Taylor A и др. Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles. EPJ Applied Physics. 2019 дек. 1;88(3):19025. doi: 10.1051/epjap/2020190253

Author

Remes, Zdenek ; Stuchlik, Jiri ; Stuchlikova, The-ha и др. / Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles. в: EPJ Applied Physics. 2019 ; Том 88, № 3.

BibTeX

@article{275a0cc6aedc4776b3939d346fd89d16,

title = "Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles",

abstract = "Hydrogenated amorphous substoichiometric silicon carbon alloys (a-SiC:H) with and without embedded Ge nanoparticles (NPs) have been prepared by plasma enhanced chemical vapour deposition combined with in-situ Ge evaporation and annealing on semi-transparent boron doped nano-crystalline diamond coated Ti grids. The presence of Ge NPs embedded in the amorphous phase has been confirmed by transmission electron microscopy and energy-dispersive X-ray spectroscopy analyses. Current-voltage (I-V) characteristics and near infrared electroluminescence (EL) spectra were measured to compare performance of diodes. The relatively strong EL appears in diodes with integrated Ge NPs near the direct band-gap transition of Ge at about 0.82 eV with an intensity strongly correlating with current density. However, it has also been found that Ge NPs integrated into a-SiC:H significantly deteriorates diode I-V characteristic.",

keywords = "HYDROGENATED SILICON",

author = "Zdenek Remes and Jiri Stuchlik and The-ha Stuchlikova and Jaroslav Kupcik and Vincent Mortet and Andrew Taylor and Petr Ashcheulov and Volodin, {Vladimir Alekseevich}",

year = "2019",

month = dec,

day = "1",

doi = "10.1051/epjap/2020190253",

language = "English",

volume = "88",

journal = "EPJ Applied Physics",

issn = "1286-0042",

publisher = "EDP SCIENCES S A",

number = "3",

}

RIS

TY - JOUR

T1 - Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles

AU - Remes, Zdenek

AU - Stuchlik, Jiri

AU - Stuchlikova, The-ha

AU - Kupcik, Jaroslav

AU - Mortet, Vincent

AU - Taylor, Andrew

AU - Ashcheulov, Petr

AU - Volodin, Vladimir Alekseevich

PY - 2019/12/1

Y1 - 2019/12/1

N2 - Hydrogenated amorphous substoichiometric silicon carbon alloys (a-SiC:H) with and without embedded Ge nanoparticles (NPs) have been prepared by plasma enhanced chemical vapour deposition combined with in-situ Ge evaporation and annealing on semi-transparent boron doped nano-crystalline diamond coated Ti grids. The presence of Ge NPs embedded in the amorphous phase has been confirmed by transmission electron microscopy and energy-dispersive X-ray spectroscopy analyses. Current-voltage (I-V) characteristics and near infrared electroluminescence (EL) spectra were measured to compare performance of diodes. The relatively strong EL appears in diodes with integrated Ge NPs near the direct band-gap transition of Ge at about 0.82 eV with an intensity strongly correlating with current density. However, it has also been found that Ge NPs integrated into a-SiC:H significantly deteriorates diode I-V characteristic.

AB - Hydrogenated amorphous substoichiometric silicon carbon alloys (a-SiC:H) with and without embedded Ge nanoparticles (NPs) have been prepared by plasma enhanced chemical vapour deposition combined with in-situ Ge evaporation and annealing on semi-transparent boron doped nano-crystalline diamond coated Ti grids. The presence of Ge NPs embedded in the amorphous phase has been confirmed by transmission electron microscopy and energy-dispersive X-ray spectroscopy analyses. Current-voltage (I-V) characteristics and near infrared electroluminescence (EL) spectra were measured to compare performance of diodes. The relatively strong EL appears in diodes with integrated Ge NPs near the direct band-gap transition of Ge at about 0.82 eV with an intensity strongly correlating with current density. However, it has also been found that Ge NPs integrated into a-SiC:H significantly deteriorates diode I-V characteristic.

KW - HYDROGENATED SILICON

UR - http://www.scopus.com/inward/record.url?scp=85091898722&partnerID=8YFLogxK

U2 - 10.1051/epjap/2020190253

DO - 10.1051/epjap/2020190253

M3 - Article

VL - 88

JO - EPJ Applied Physics

JF - EPJ Applied Physics

SN - 1286-0042

IS - 3

M1 - 19025

ER -

ID: 23787246